Compact SOT 363 Package N Channel Transistor Slkor 2N7002DW Suitable for Switching and Amplification

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Product Description

Product Overview

The 2N7002DW is a N-Channel Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers efficient switching and amplification capabilities in a compact SOT-363 package.

Product Attributes

Brand: SLKORMicro
Model: 2N7002DW
Package: SOT-363

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Drain Source Voltage	VDSS	60	V	Absolute Maximum Ratings (Ta = 25)
Drain Gate Voltage (RGS U 1 M)	VDGR	60	V	Absolute Maximum Ratings (Ta = 25)
Gate Source Voltage Continuous	VGSS	20	V	Absolute Maximum Ratings (Ta = 25)
Gate Source Voltage Pulsed	VGSS	40	V	Absolute Maximum Ratings (Ta = 25)
Drain Current Continuous	ID	115	mA	Absolute Maximum Ratings (Ta = 25)
Drain Current Pulsed	ID	800	mA	Absolute Maximum Ratings (Ta = 25)
Total Power Dissipation	Ptot	200	mW	Absolute Maximum Ratings (Ta = 25)
Junction Temperature	Tj	150		Absolute Maximum Ratings (Ta = 25)
Storage Temperature Range	TStg	- 55 to + 150		Absolute Maximum Ratings (Ta = 25)
Drain Source Breakdown Voltage	BVDSS	60	V	ID = 10 A, Ta = 25
Zero Gate Voltage Drain Current	IDSS	1	A	VDS = 60 V, Ta = 25
Gate Source Leakage Current	IGSS	- 100	nA	VGS = 20 V, Ta = 25
Gate Source Threshold Voltage	VGS(th)	1 to 2.5	V	VDS = VGS = 10 V, ID = 250 A, Ta = 25
Static Drain Source On Resistance	RDS(ON)	7.5		VGS = 5 V, ID = 50 mA, Ta = 25
Static Drain Source On Resistance	RDS(ON)	7.5		VGS = 10 V, ID = 500 mA, Ta = 25
Drain Source On Voltage	VDS(ON)	1.5	V	VGS = 5 V, ID = 50 mA, Ta = 25
Drain Source On Voltage	VDS(ON)	3.75	V	VGS = 10 V, ID = 500 mA, Ta = 25
Forward Transconductance	gFS	80	mS	VDS = 10 V, ID = 200 mA, Ta = 25
Input Capacitance	Ciss	50	pF	VDS = 25 V, f = 1 MHz, Ta = 25
Output Capacitance	Coss	25	pF	VDS = 25 V, f = 1 MHz, Ta = 25
Reverse Transfer Capacitance	Crss	5	pF	VDS = 25 V, f = 1 MHz, Ta = 25
Turn On Time	ton	20	ns	VDD = 30V, RL = 150, ID = 0.2A, VGS = 10V, RGEN = 25, Ta = 25
Turn Off Time	toff	20	ns	VDD = 30V, RL = 150, ID = 0.2A, VGS = 10V, RGEN = 25, Ta = 25