N Channel 200V Trench Power MOSFET VBsemi Elec VBA1203M Optimized for PWM Applications and Switching
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Product Description
Product Overview
The VBA1203M is a 1-Channel 200V N-Channel Trench Power MOSFET designed for primary side switching applications. It features a high junction temperature of 175C, optimized for PWM applications, and is 100% Rg tested. This MOSFET offers robust performance and reliability, compliant with RoHS Directive 2002/95/EC.
Product Attributes
- Brand: VBsemi
- Origin: Taiwan
- Certifications: RoHS Directive 2002/95/EC, Halogen-Free (JEDEC JS709A)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| N-Channel 200 V (D-S) MOSFET | ||||||
| Drain-Source Voltage | VDS | 200 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (TJ = 175 C) | ID | TC = 25 C | 3 | A | ||
| Continuous Drain Current (TJ = 175 C) | ID | TC = 125 C | 1 | A | ||
| Pulsed Drain Current | IDM | 0 | A | |||
| Continuous Source Current (Diode Conduction) | IS | 6 | A | |||
| Avalanche Current | IAS | 6 | A | |||
| Single Pulse Avalanche Energy | EAS | L = 0.1 mH | 18 | mJ | ||
| Maximum Power Dissipation | PD | TC = 25 C | 96 | W | ||
| Maximum Power Dissipation | PD | TA = 25 C | 3 | W | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | C | ||
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 250 A | 200 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 A | 2 | 4 | V | |
| Gate-Body Leakage | IGSS | VDS = 0 V, VGS = 20 V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 200 V, VGS = 0 V | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 200 V, VGS = 0 V, TJ = 125 C | 50 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 200 V, VGS = 0 V, TJ = 175 C | 250 | A | ||
| On-State Drain Current | ID(on) | VDS = 5 V, VGS = 10 V | 40 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V, ID = 3 A | 0. | |||
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V, ID = 3 A, TJ = 125 C | 0. | |||
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V, ID = 3 A, TJ = 175 C | 0.330 | |||
| Drain-Source On-State Resistance | RDS(on) | VGS = 6 V, ID = 3 A | 0.292 | |||
| Forward Transconductance | gfs | VDS = 15 V, ID = 3 A | 35 | S | ||
| Input Capacitance | Ciss | VGS = 0 V, VDS = 25 V, F = 1 MHz | 1800 | pF | ||
| Output Capacitance | Coss | VGS = 0 V, VDS = 25 V, F = 1 MHz | 180 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS = 0 V, VDS = 25 V, F = 1 MHz | 80 | pF | ||
| Total Gate Charge | Qg | VDS = 100 V, VGS = 10 V, ID = 3 A | 34 | 51 | nC | |
| Gate-Source Charge | Qgs | VDS = 100 V, VGS = 10 V, ID = 3 A | 8 | nC | ||
| Gate-Drain Charge | Qgd | VDS = 100 V, VGS = 10 V, ID = 3 A | 12 | nC | ||
| Gate Resistance | Rg | 0.5 | 2.9 | |||
| Turn-On Delay Time | td(on) | VDD = 100 V, RL = 5.2 ID 3 A, VGEN = 10 V, Rg = 2.5 | 15 | 25 | ns | |
| Rise Time | tr | VDD = 100 V, RL = 5.2 ID 3 A, VGEN = 10 V, Rg = 2.5 | 50 | 75 | ns | |
| Turn-Off Delay Time | td(off) | VDD = 100 V, RL = 5.2 ID 3 A, VGEN = 10 V, Rg = 2.5 | 30 | 45 | ns | |
| Fall Time | tf | VDD = 100 V, RL = 5.2 ID 3 A, VGEN = 10 V, Rg = 2.5 | 60 | 90 | ns | |
| Pulsed Current | ISM | 5 | A | |||
| Diode Forward Voltage | VSD | IF = 3 A, VGS = 0 V | 0.9 | 1.5 | V | |
| Source-Drain Reverse Recovery Time | trr | IF = 3 A, dI/dt = 100 A/s | 180 | 250 | ns |
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