Electronic applications P Channel MOSFET VBsemi Elec TPC8104 H VB 30 Volt low on resistance device
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Product Description
TPC8104-H-VB P-Channel 30-V (D-S) MOSFET
The TPC8104-H-VB is a P-Channel Trench Power MOSFET designed for various electronic applications. It offers low on-resistance and high efficiency, making it suitable for power management solutions. This MOSFET is compliant with RoHS directives and is halogen-free.
Product Attributes
- Brand: VBsemi
- Certifications: Halogen-free (IEC 61249-2-21), RoHS Directive 2002/95/EC compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | Steady State | - 30 | V | ||
| Gate-Source Voltage | VGS | ± 20 | V | |||
| Continuous Drain Current (TA = 25 °C) | ID | (TJ = 150 °C)a | - 5.8 | A | ||
| Continuous Drain Current (TA = 70 °C) | a | - 4.1 | ||||
| Pulsed Drain Current | IDM | - 30 | A | |||
| Continuous Source Current (Diode Conduction) | IS | (TA = 25 °C)a | - 2.3 | A | ||
| Continuous Source Current (Diode Conduction) | (TA = 70 °C)a | - 1.1 | ||||
| Maximum Power Dissipation | PD | (TA = 25 °C)a | 2.5 | W | ||
| Maximum Power Dissipation | (TA = 70 °C)a | 1.3 | ||||
| Operating Junction and Storage Temperature Range | TJ, Tstg | - 55 | 150 | °C | ||
| Thermal Resistance Ratings | ||||||
| Maximum Junction-to-Ambient | RthJA | t ≤ 10 s | 40 | 50 | °C/W | |
| Maximum Junction-to-Ambient | Steady State | 70 | 95 | |||
| Maximum Junction-to-Foot (Drain) | RthJF | Steady State | 24 | 30 | °C/W | |
| Specifications | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = - 250 µA | - 0.7 | - 2.0 | V | |
| Gate-Body Leakage | IGSS | VDS = 0 V, VGS = ± 20 V | ± 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = - 30 V, VGS = 0 V | - 1 | µA | ||
| Zero Gate Voltage Drain Current | VDS = - 30 V, VGS = 0 V, TJ = 70 °C | - 5 | ||||
| On-State Drain Current | ID(on) | VDS ≤ - 10 V, VGS = - 10 V | - 20 | A | ||
| On-State Drain Current | ID(on) | VDS ≤ - 5 V, VGS = - 4.5 V | - 5 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = - 10 V, ID = - 5.8 A | 0.033 | Ω | ||
| Drain-Source On-State Resistance | VGS = - 6 V, ID = - 5 A | 0.043 | Ω | |||
| Drain-Source On-State Resistance | VGS = - 4.5 V, ID = - 4.4 A | 0.056 | Ω | |||
| Forward Transconductance | gfs | VDS = - 15 V, ID = - 5.8 A | 13 | S | ||
| Diode Forward Voltage | VSD | IS = - 2.3 A, VGS = 0 V | - 0.8 | - 1.1 | V | |
| Diode Forward Voltage | IS = - 1.2 A, VGS = 0 V | |||||
| Total Gate Charge | Qg | VDS = - 15 V, VGS = - 10 V, ID = - 3.5 A | 16 | 24 | nC | |
| Gate-Source Charge | Qgs | 2.3 | nC | |||
| Gate-Drain Charge | Qgd | 4.5 | nC | |||
| Gate Resistance | Rg | 8.8 | Ω | |||
| Turn-On Delay Time | td(on) | VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω | 14 | 25 | ns | |
| Rise Time | tr | 14 | 25 | ns | ||
| Turn-Off Delay Time | td(off) | 42 | 70 | ns | ||
| Fall Time | tf | 5 | 30 | ns | ||
| Source-Drain Reverse Recovery Time | trr | IF = - 1.2 A, dI/dt = 100 A/µs | 30 | 60 | ns | |
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