Low voltage high current medium power PNP transistor Suzhou Good-Ark Elec GSBCX53 for general purpose

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Product Description

Product Overview

The GSBCX51, GSBCX52, and GSBCX53 are PNP transistors designed for low voltage and high current applications. They serve as medium power general-purpose devices and are suitable for driver stages in audio amplifiers. These transistors are NPN complements to the GSBCX54, GSBCX55, and GSBCX56 series.

Product Attributes

Brand: goodarksemi
Certifications: RoHS Compliant

Technical Specifications

Parameter	Symbol	GSBCX51	GSBCX52	GSBCX53	Unit	Test Conditions
Collector-Emitter Voltage	VCEO	-45	-60	-100	V	IC=-10mA, IB=0
Collector-Base Voltage	VCBO	-45	-60	-80	V	IE=0
Emitter-Base Voltage	VEBO	-5			V	IC=0
Collector Current	IC	-1			A
Collector Power Dissipation	PC	500			mW	TA=25C unless otherwise noted
Junction Temperature	TJ	150
Storage Temperature	TSTG	-55 to +150
Emitter-Base Breakdown Voltage	V(BR)EBO	-5			V	IE=-100A, IC=0
Collector-Base Breakdown Voltage	V(BR)CBO	-45	-60	-100	V	IC=-100A, IE=0
Collector-Emitter Breakdown Voltage	V(BR)CEO	-45	-60	-80	V	IC=-10mA, IB=0
Collector Cut-Off Current	ICBO	-0.1			A	VCB=-30V, IE=0
Emitter Cut-Off Current	IEBO	-0.1			A	VEB=-5V, IC=0
DC Current Gain (hFE)	hFE(1)	63				VCE=-5V, IC=-10mA, f=100MHz
DC Current Gain (hFE)	hFE(2)	63-250	63-160	100-250		VCE=-2V, IC=-0.5A
DC Current Gain (hFE)	hFE(3)	40				IC=-0.5A, IB=-50mA
Collector-Emitter Saturation Voltage	VCE(sat)	-0.5			V	VCE=-2V, IC=-0.5A
Base-Emitter Voltage	VBE	-1			V	VCE=-2V, IC=-0.5A
Transition Frequency	fT	50			MHz	VCE=-2V, IC=-150mA
Thermal Resistance From Junction To Ambient	RJA	250			/W