Dual P Channel Trench Power MOSFET VBsemi Elec DMP4025LSD VB for Load Switching Applications in PCs
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Product Description
Product Overview
The DMP4025LSD-VB is a Dual P-Channel Trench Power MOSFET designed for load switching applications in notebook PCs, desktop PCs, and game stations. It features a 30V Drain-Source voltage and a low on-resistance of 0.028 at VGS = -4.5V. This MOSFET is 100% UIS tested and Halogen-free.
Product Attributes
- Brand: VBsemi
- Part Number: DMP4025LSD-VB
- Channel Type: Dual P-Channel
- Certifications: Halogen-free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = -250 A | -30 | V | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = -250 A | -1.0 | - | -3.0 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = -30 V, VGS = 0 V | -1 | A | ||
| On-State Drain Current | ID(on) | VDS -10 V, VGS = -10 V | -30 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -10 V, ID = -7.3 A | 0.020 | 0.021 | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -4.5 V, ID = -6.2 A | 0.028 | |||
| Total Gate Charge | Qg | VDS = -15 V, VGS = -10 V, ID = -9.1 A | 32 | 50 | nC | |
| Continuous Source-Drain Diode Current | IS | TC = 25 C | -4.1 | A | ||
| Body Diode Forward Voltage | VSD | IS = -2 A, VGS = 0 V | -0.75 | - | -1.2 | V |
| Body Diode Reverse Recovery Time | trr | IS = -2 A, dI/dt = 100 A/s, TJ = 25 C | 34 | 60 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IS = -2 A, dI/dt = 100 A/s, TJ = 25 C | 22 | 40 | nC |
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