Dual N Channel MOSFET Slkor SL4826A 60V 6.3A with Low RDS ON Resistance and Avalanche Voltage Rating
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Product Description
Product Overview
The SL4826A is a 60V/6.3A Dual N-Channel MOSFET designed for high-density cell design, offering ultra-low RDS(ON). It is fully characterized for avalanche voltage and current and features an excellent package for good heat dissipation. This MOSFET is ideal for power switching applications.
Product Attributes
- Brand: SLKormicro
- Model: SL4826A
- Package: SOP-8
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| BV(BR)DSS | Drain-Source Breakdown Voltage | VGS=0VID=250A | 60 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=60VVGS=0V | -- | -- | 1 | A |
| IGSS | Gate-Body Leakage Current | VGS=20VVDS=0V | -- | -- | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGSID=250A | 1.2 | 1.7 | 2.5 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=10V ID=6.3A | -- | 22 | 30 | m |
| VGS=4.5VID=5.7A | -- | 30 | 40 | m | ||
| CISS | Input Capacitance | VDS=30VVGS=0V f=1MHz | -- | 1050 | -- | pF |
| COSS | Output Capacitance | VDS=30VVGS=0V f=1MHz | -- | 65 | -- | pF |
| CRSS | Reverse Transfer Capacitance | VDS=30VVGS=0V f=1MHz | -- | 55 | -- | pF |
| Qg | Total Gate Charge | VDD=30VID=10A VGS=10VRG=3 | -- | 26 | -- | nC |
| Qgs | Gate Source Charge | VDD=30VID=10A VGS=10VRG=3 | -- | 5.7 | -- | nC |
| Qgd | Gate Drain Charge | VDD=30VID=10A VGS=10VRG=3 | -- | 5.2 | -- | nC |
| td(on) | Turn-on Delay Time | VDD=30VID=10A VGS=10VRG=3 | -- | 8.4 | -- | nS |
| tr | Turn-on Rise Time | VDD=30VID=10A VGS=10VRG=3 | -- | 8.5 | -- | nS |
| td(off) | Turn-Off Delay Time | VDD=30VID=10A VGS=10VRG=3 | -- | 36 | -- | nS |
| tf | Turn-Off Fall Time | VDD=30VID=10A VGS=10VRG=3 | -- | 5 | -- | nS |
| VSD | Forward on voltage | Tj=25Is=10A | -- | 0.8 | 1.2 | V |
| PD | Maximum Power Dissipation | Tc=25C, Mounted on Large Heat Sink | -- | -- | 2 | W |
| RJA | Thermal Resistance Junction-Ambient | 60 | -- | -- | C/W | |
| VDS | Drain-Source Breakdown Voltage | 60 | -- | -- | V | |
| VGS | Gate-Source Voltage | 20 | -- | -- | V | |
| TJ | Maximum Junction Temperature | -- | -- | 150 | C | |
| TSTG | Storage Temperature Range | -50 | -- | 155 | C | |
| ID | Tested Continuous Drain Current | Tc=25C | -- | 6.3 | -- | A |
| IDM | Pulse Drain Current | Tc=25C | -- | 28 | -- | A |
| IS | Diode Continuous Forward Current | Tc=25C | -- | 6.3 | -- | A |
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