Power MOSFET VBsemi Elec VBA3310 Dual N Channel 30 Volt Trench Device for Notebook CPU Core Switching

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Product Description

Product Overview

The VBA3310 is a dual N-Channel 30-V (D-S) Trench Power MOSFET optimized for high-side synchronous rectifier operation. It features low on-resistance, high efficiency, and is 100% Rg and UIS tested, making it ideal for notebook CPU core applications as a high-side switch.

Product Attributes

Brand: VBsemi
Certifications: Halogen-free
Package Type: SO-8

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = 250 A	30			V
Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = 250 A	1.2		2.5	V
Gate-Source Leakage	IGSS	VDS = 0 V, VGS = 20 V			100	nA
Zero Gate Voltage Drain Current	IDSS	VDS = 30 V, VGS = 0 V			1	A
On-State Drain Current	ID(on)	VDS 5 V, VGS = 10 V		20		A
Drain-Source On-State Resistance	RDS(on)	VGS = 10 V, ID = 10 A		0.010
Drain-Source On-State Resistance	RDS(on)	VGS = 4.5 V, ID = 9 A		0.012
Forward Transconductance	gfs	VDS = 15 V, ID = 10 A		52		S
Input Capacitance	Ciss	VDS = 15 V, VGS = 0 V, f = 1 MHz		641		pF
Output Capacitance	Coss	VDS = 15 V, VGS = 0 V, f = 1 MHz		175		pF
Reverse Transfer Capacitance	Crss	VDS = 15 V, VGS = 0 V, f = 1 MHz		73		pF
Total Gate Charge	Qg	VDS = 15 V, VGS = 10 V, ID = 10 A		15	23	nC
Total Gate Charge	Qg	VDS = 15 V, VGS = 5 V, ID = 10 A		6.8	10.2	nC
Gate Resistance	Rg	f = 1 MHz		0.36	1.8
Turn-On Delay Time	td(on)	VDD = 15 V, RL = 1.4 , ID 9 A, VGEN = 4.5 V, Rg = 1		16	24	ns
Rise Time	tr	VDD = 15 V, RL = 1.4 , ID 9 A, VGEN = 4.5 V, Rg = 1		12	18	ns
Turn-Off Delay Time	td(off)	VDD = 15 V, RL = 1.4 , ID 9 A, VGEN = 4.5 V, Rg = 1		16	24	ns
Fall Time	tf	VDD = 15 V, RL = 1.4 , ID 9 A, VGEN = 4.5 V, Rg = 1		10	20	ns
Body Diode Voltage	VSD	IS = 9 A		0.8	1.2	V
Body Diode Reverse Recovery Time	trr	IF = 9 A, dI/dt = 100 A/s, TJ = 25 C		15	30	ns
Body Diode Reverse Recovery Charge	Qrr	IF = 9 A, dI/dt = 100 A/s, TJ = 25 C		6	12	nC