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High Speed Switching P Channel MOSFET Slkor FDN306P Designed for Load Switching and Power Management

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The FDN306P is a P-Channel MOSFET featuring Trench Power LV MOSFET technology and a high-density cell design for low RDS(ON). It offers high-speed switching capabilities, making it suitable for battery protection, load switching, and power management applications.

Product Attributes

  • Brand: slkormicro
  • Model: FDN306P
  • Package: SOT-23

Technical Specifications

ParameterConditionMinTypMaxUnit
Absolute Maximum Ratings
VDS-12V
VGS±8V
TJ150°C
TSTG-55150°C
ISTc=25°C-2.6A
IDMTc=25°C-10.0A
IDTc=25°C-2.6A
RθJAMounted on Large Heat Sink250°C/W
PD0.5W
Static Electrical Characteristics @ TJ = 25°C (unless otherwise noted)
BV(BR)DSSVGS=0VID=-250μA-12V
IDSSVDS=-10VVGS=0V-1μA
IGSSVGS=±8VVDS=0V±100nA
VGS(th)VDS=VGSID=-250μA-0.4-0.7-1.5V
RDS(on)VGS=-4.5VID=-2.6A3040
RDS(on)VGS=-2.5VID=-2.3A3950
RDS(on)VGS=-1.8VID=-1.8A5480
CISSVDS=-9VVGS=0V f=1MHz1015pF
COSSVDS=-9VVGS=0V f=1MHz138pF
CRSSVDS=-9VVGS=0V f=1MHz105pF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
QgVDS=-9VID=-5.6A VGS=-4.5V11.3nC
QgsVDD=-9VID=-1A VGS=-4.5VRG=2.5Ω2.3nC
QgdVDD=-9VID=-1A VGS=-4.5VRG=2.5Ω2.4nC
td(on)VDD=-9VID=-1A VGS=-4.5VRG=2.5Ω8.5nS
trVDD=-9VID=-1A VGS=-4.5VRG=2.5Ω35.5nS
td(off)VDD=-9VID=-1A VGS=-4.5VRG=2.5Ω78nS
tfVDD=-9VID=-1A VGS=-4.5VRG=2.5Ω58nS
Source- Drain Diode Characteristics
VSDTj=25°CIs=-2.6A-1.2V

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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