650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and motion control systems
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Product Description
SPT60N65F1A1 650V / 60A Trench Field Stop IGBT
The SPTECH 650V Trench Field Stop IGBTs are designed for high performance in demanding applications. They offer low switching losses, high energy efficiency, and robust avalanche ruggedness, making them ideal for motion control, solar applications, and welding machines. Key features include high breakdown voltage for enhanced reliability, Trench-Stop Technology for high-speed switching and stable ruggedness, low VCEsat, and easy parallel switching capability due to a positive temperature coefficient in VCEsat.
Product Attributes
- Brand: SPTECH
- Product Code: SPT60N65F1A1
- Package: TO247
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| General | ||||
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | Tj= 25 unless otherwise specified |
| DC collector current, limited by Tjmax | IC | 120 (TC = 25C) / 60 (TC = 100C) | A | |
| Diode Forward current, limited by Tjmax | IF | 120 (TC = 25C) / 60 (TC = 100C) | A | |
| Continuous Gate-emitter voltage | VGE | ±20 | V | |
| Transient Gate-emitter voltage | VGE | ±30 | V | |
| Pulse collector current, VGE =15V, tp limited by Tjmax | ICM | 180 | A | |
| Power dissipation, Tj=25C | Ptot | 260 | W | |
| Operating junction temperature | Tj | -40...+150 | °C | |
| Storage temperature | Ts | -55...+150 | °C | |
| Soldering temperature, wave soldering 1.6mm from case for 10s | 260 | °C | ||
| Thermal Resistance | ||||
| IGBT thermal resistance, junction - case | Rθ(j-c) | 0.48 | K/W | |
| Diode thermal resistance, junction - case | Rθ(j-c) | 1.1 | K/W | |
| Thermal resistance, junction - ambient | Rθ(j-a) | 40 | K/W | |
| Electrical Characteristics | ||||
| Static Collector-Emitter Breakdown Voltage | BVCES | 650 | V | VGE=0V , IC=250uA |
| Gate Threshold Voltage | VGE(th) | 4.0 / 5.0 / 6.0 | V | VGE=VCE, IC=250uA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.85 (Tj = 25°C) / 2.25 (Tj = 150°C) | V | VGE=15V, IC=60A |
| Zero gate voltage collector current | ICES | 0.1 (Tj = 25°C) / 1000 (Tj = 150°C) | μA | VCE = 650V, VGE = 0V |
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0V, VGE =±20V |
| Transconductance | gfs | 52 | S | VCE = 20V, IC = 60A |
| Dynamic Characteristics | ||||
| Input capacitance | Cies | 3800 | pF | VCE = 30V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | 130 | pF | VCE = 30V, VGE = 0V, f = 1MHz |
| Reverse transfer capacitance | Cres | 70 | pF | VCE = 30V, VGE = 0V, f = 1MHz |
| Gate charge | QG | 158 | nC | VCC = 520V, IC = 60A, VGE = 15V |
| Switching Characteristics (Inductive Load) | ||||
| Turn-on Delay Time | td(on) | 56 | ns | Tj=25°C, VCC = 400V, IC = 60.0A, VGE = 0.0/15.0V, Rg=12Ω |
| Rise Time | tr | 79 | ns | Tj=25°C, VCC = 400V, IC = 60.0A, VGE = 0.0/15.0V, Rg=12Ω |
| Turn-off Delay Time | td(off) | 165 | ns | Tj=25°C, VCC = 400V, IC = 60.0A, VGE = 0.0/15.0V, Rg=12Ω |
| Fall Time | tf | 81 | ns | Tj=25°C, VCC = 400V, IC = 60.0A, VGE = 0.0/15.0V, Rg=12Ω |
| Turn-on Energy | Eon | 2.2 | mJ | Tj=25°C, VCC = 400V, IC = 60.0A, VGE = 0.0/15.0V, Rg=12Ω |
| Turn-off Energy | Eoff | 0.89 | mJ | Tj=25°C, VCC = 400V, IC = 60.0A, VGE = 0.0/15.0V, Rg=12Ω |
| Diode Electrical Characteristics | ||||
| Diode Forward Voltage | VFM | 2.9 | V | IF = 60A, Tj = 25°C |
| Reverse Recovery Time | Trr | 90 | ns | IF= 40A, VR = 300V, di/dt= 600A/μs, Tj = 25°C |
| Reverse Recovery Current | Irr | 17 | A | IF= 40A, VR = 300V, di/dt= 600A/μs, Tj = 25°C |
| Reverse Recovery Charge | Qrr | 900 | nC | IF= 40A, VR = 300V, di/dt= 600A/μs, Tj = 25°C |
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