650V 15A Trench Field Stop IGBT with Soft Current Turn Off Waveforms SPTECH SPT15N65T1 Low Saturation Voltage

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Product Description

Product Overview

The SPT15N65T1 is a 650V / 15A Trench Field Stop IGBT designed for high-reliability applications. It features a maximum junction temperature of 150C, a high breakdown voltage of 650V, and a very low saturation voltage of 1.65V (Typ.) at 15A. The device also offers soft current turn-off waveforms, making it suitable for soft switching applications, air conditioning, and motor drive inverters.

Product Attributes

Brand: SPT (implied from product code)
Package: TO-220MF
Packaging: Tube
Website: http://www.zhichaowei.com/

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
IGBT Features
Max Junction Temperature	Tjmax	150	C
High breakdown voltage	VCE	650	V
Short Circuit Rated	-	-	-
Very Low Saturation Voltage	VCE(SAT)	1.65	V	IC = 15A (Typ.)
Soft current turn-off waveforms	-	-	-
Maximum Ratings
Collector-Emitter Breakdown Voltage	VCE	650	V	Tj= 25
DC collector current	IC	30 / 15	A	TC = 25C / 100C
Diode Forward current	IF	30 / 15	A	TC = 25C / 100C
Continuous Gate-emitter voltage	VGE	20	V
Transient Gate-emitter voltage	VGE	30	V
Turn off safe operating area	-	-60	A	VCE 650V, Tj 150C
Pulsed collector current	ICM	45	A	VGE=15V, tp limited by Tjmax
Short Circuit Withstand Time	Tsc	5	s	VGE= 15V, VCE 400V
Power dissipation	Ptot	27	W	Tj=25
Operating junction temperature	Tj	-40...+150	C
Storage temperature	Ts	-55...+150	C
Soldering temperature, wave soldering	-	260	C	1.6mm from case for 10s
Thermal Resistance
IGBT thermal resistance, junction - case	R(j-c)	4.9	K/W
Diode thermal resistance, junction - case	R(j-c)	5.8	K/W
Thermal resistance, junction - ambient	R(j-a)	62.5	K/W
Electrical Characteristics (IGBT)
Collector to Emitter Breakdown Voltage	BVCES	650	V	VGE = 0V, IC = 1mA
Collector to Emitter Saturation Voltage	VCE(SAT)	1.65 / 1.95	V	IC = 15A, VGE = 15V (Typ. / Max.)
G-E Threshold Voltage	VGE(th)	4.1 / 5.0 / 5.7	V	VGE = VCE, IC = 250A (Min. / Typ. / Max.)
Collector Cut-Off Current	ICES	10	A	VCE = 650V, VGE = 0V (Max.)
G-E Leakage Current	IGES	200	nA	VGE = 20V, VCE = 0V (Max.)
Transconductance	gfs	10	S	VCE=20V, IC=15A (Typ.)
Dynamic Characteristics (IGBT)
Input capacitance	Cies	1910	pF	VCE = 25V, VGE = 0V, f = 1MHz (Typ.)
Output capacitance	Coes	80	pF	VCE = 25V, VGE = 0V, f = 1MHz (Typ.)
Reverse transfer capacitance	Cres	46	pF	VCE = 25V, VGE = 0V, f = 1MHz (Typ.)
Gate charge	QG	92	nC	VCC = 480V, IC = 15A, VGE = 15V (Typ.)
Short circuit collector current	ICSC	98	A	VGE=15V,tSC5us, VCC=400V, Tjstart=25C (Typ.)
Switching Characteristics (IGBT)
Turn-on Delay Time	td(on)	15	ns	VCC = 400V, IC = 15A, VGE = 0/15V, Rg=12 (Typ.)
Rise Time	tr	25	ns	VCC = 400V, IC = 15A, VGE = 0/15V, Rg=12 (Typ.)
Turn-off Delay Time	td(off)	60	ns	VCC = 400V, IC = 15A, VGE = 0/15V, Rg=12 (Typ.)
Fall Time	tf	46	ns	VCC = 400V, IC = 15A, VGE = 0/15V, Rg=12 (Typ.)
Turn-on Energy	Eon	0.75	mJ	VCC = 400V, IC = 15A, VGE = 0/15V, Rg=12 (Typ.)
Turn-off Energy	Eoff	0.1	mJ	VCC = 400V, IC = 15A, VGE = 0/15V, Rg=12 (Typ.)
Electrical Characteristics (DIODE)
Diode Forward Voltage	VFM	1.7	V	IF = 15A (Typ.)
Reverse Recovery Time	Trr	50	ns	IF= 15A, VR = 300V, di/dt =200A/s (Typ.)
Reverse Recovery Current	Irr	4	A	IF= 15A, VR = 300V, di/dt =200A/s (Typ.)
Reverse Recovery Charge	Qrr	83	nC	IF= 15A, VR = 300V, di/dt =200A/s (Typ.)