High Voltage N channel MOSFET Slkor SL8N100 1000V 8A Drain Current Continuous for Power Electronics

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Product Description

Product Overview

The SL8N100 Series is a high-performance N-channel MOSFET designed for demanding power applications. It features low gate charge, low Crss, and fast switching speeds, making it ideal for high-frequency switching mode power supplies and electronic ballasts. The device is 100% avalanche tested and offers improved dv/dt capability, ensuring reliability and efficiency. It is RoHS compliant.

Product Attributes

Brand: SLKORMicro
Certifications: RoHS

Technical Specifications

Parameter	Symbol	Tests conditions	Min	Type	Max	Unit	Notes
Drain-Source Voltage	VDSS		1000		V


Drain Current-continuous	ID	T=25		8		A
Drain Current-continuous	ID	T=100		5		A
Drain Current-pulse	IDM			32*		A	*Drain current limited by maximum junction temperature
Gate-Source Voltage	VGS			30		V
Single pulse avalanche energy	EAS	L=33.0mH, IAS=8A, VDD=50V, RG=25 ,Starting TJ=25		650		mJ	2
Avalanche Current	IAR			8		A	1
Repetitive Avalanche Energy	EAR			393		mJ	1
Power Dissipation (TO-220\TO-247)	PD	TC=25		167		W
Power Dissipation (TO-220\TO-247)	PD	Derate above 25		1.43		W/
Power Dissipation (TO-263\TO-262)	PD	TC=25		83		W
Power Dissipation (TO-263\TO-262)	PD	Derate above 25		0.34		W/
Power Dissipation (TO-220F)	PD	TC=25		31.7		W
Power Dissipation (TO-220F)	PD	Derate above 25		0.25		W/
Operating and Storage Temperature Range	TJ,TSTG		-55		+150
Peak Diode Recovery dv/dt	dv/dt	ISD 8A,di/dt 200A/s,VDDBVDSS, Starting TJ=25		4.5		V/ns	3
Maximum Lead Temperature for Soldering Purposes	TL			300
Breakdown Voltage	BVDSS	ID=250A,VGS=0V	1000		-	V
Breakdown Voltage Temperature Coefficient	BVDSS/ TJ	ID=250A,referenced to 25		1.05		V/
Zero Gate Voltage Drain Current	IDSS	VDS=1000V,VGS=0V TC=25		-	1	A
Zero Gate Voltage Drain Current	IDSS	VDS=800V,TC =125		-	10	A
Gate body leakage current	IGSS	VDS=0V,VGS=30V		-	100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS,ID=250A	3.0	-	5.0	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V,ID=4A		1.8	2.3
Forward Transconductance	gFS	VDS=40V,ID=4A		5.6	-	S	4
Input capacitance	Ciss	VDS=25V, VGS=0V, f=1.0MHZ		687	-	pF
Output capacitance	Coss			67	-	pF
Reverse transfer capacitance	Crss			12	-	pF
Turn-On delay time	td(on)	VDD=500V,ID=8A, RGEN=25		13	-	ns	4,5
Turn-On rise time	tr			22	-	ns
Turn-Off delay time	td(Off)			63	-	ns
Turn-Off rise time	tf			19	-	ns
Total Gate Charge	Qg	VDS=750V,ID=4A, VGS=10V		14	-	nC	4,5
Gate-Source charge	Qgs			4	-	nC
Gate-Drain charge	Qg			5	-	nC
Diode Forward Voltage	VSD	VGS=0V,IS=8A		-	1.4	V	3
Maximum Pulsed Drain-Source Diode Forward Current	ISM			-	-	24	A
Maximum Continuous Drain Source Diode Forward Current	IS			-	-	8	A
Reverse recovery time	trr	VGS=0V, IS=4A dIF/dt=100A/s Tc=25		159	-	ns	4
Reverse recovery time	trr	VGS=0V, IS=3A dIF/dt=100A/s Tc=100		153	-	ns	4
Reverse recovery charge	Qrr	VGS=0V, IS=4A dIF/dt=100A/s Tc=25		693	-	nC	4
Reverse recovery charge	Qrr	VGS=0V, IS=3A dIF/dt=100A/s Tc=100		685	-	nC	4
Thermal Resistance, junction to Case	Rth(j-C)	TO-220/ TO-247		0.78		/W
		TO-263/ TO-262		3		/W
		TO-220F		3.94		/W
Thermal Resistance, Junction to Ambient	Rth(j-A)	TO-220/ TO-247		62.5		/W
		TO-263/ TO-262		65		/W
		TO-220F		80		/W