Durable 1200V 40A Trench Field Stop IGBT SPTECH SPT40N120T1B with easy parallel switching capability

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Product Description

Product Overview

The SPT40N120T1B is a 1200V, 40A Trench Field Stop IGBT designed for high reliability and ruggedness. It features Trench-Stop Technology for tight parameter distribution, stable temperature behavior, and easy parallel switching due to a positive temperature coefficient in VCE(SAT). With a short circuit withstand time of 10s and enhanced avalanche capability, this IGBT is ideal for demanding applications.

Product Attributes

Brand: Superic
Model: SPT40N120T1B

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
IGBT Characteristics
Collector-Emitter Breakdown Voltage	BVCES	VGE=0V , IC=250A	1200	1300	-	V
Gate threshold voltage	VGE(th)	VGE=VCE, IC=250A	5.1	5.8	6.4	V
Collector-Emitter Saturation voltage	VCE(sat)	VGE=15V, IC=40A, Tj = 25C	-	1.7	-	V
Collector-Emitter Saturation voltage	VCE(sat)	VGE=15V, IC=40A, Tj = 150C	-	2.1	-	V
Zero gate voltage collector current	ICES	VCE = 1200V, VGE = 0V, Tj = 25C	-	-	10	A
Zero gate voltage collector current	ICES	VCE = 1200V, VGE = 0V, Tj = 150C	-	-	2500	A
Gate-emitter leakage current	IGES	VCE = 0V, VGE = 20V	-	-	100	nA
Transconductance	gfs	VCE=20V, IC=15A	-	15	-	S
Input capacitance	Cies	VCE = 25V, VGE = 0V, f = 1MHz	-	4400	-	pF
Output capacitance	Coes	VCE = 25V, VGE = 0V, f = 1MHz	-	180	-	pF
Reverse transfer capacitance	Cres	VCE = 25V, VGE = 0V, f = 1MHz	-	100	-	pF
Gate charge	QG	VCC = 960V, IC = 40A, VGE = 15V	-	270	-	nC
Short circuit collector current	ICSC	VGE=15V,tSC10us, VCC=600V, Tjstart=25C	-	240	-	A
Turn-on delay time	td(on)	VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12, Tj = 25C	-	55	-	ns
Rise time	tr	VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12, Tj = 25C	-	20	-	ns
Turn-on energy	Eon	VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12, Tj = 25C	-	2.4	-	mJ
Turn-off delay time	td(off)	VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12, Tj = 25C	-	230	-	ns
Fall time	tf	VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12, Tj = 25C	-	160	-	ns
Turn-off energy	Eoff	VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12, Tj = 25C	-	1.5	-	mJ
Diode Characteristics
Diode Forward Voltage	VFM	IF = 40A, Tj = 25C	-	3.5	-	V
Reverse Recovery Time	Trr	IF= 40A, VR = 600V, di/dt= 400A/s, Tj = 25C	-	190	-	ns
Reverse Recovery Current	Irr	IF= 40A, VR = 600V, di/dt= 400A/s, Tj = 25C	-	6	-	A
Reverse Recovery Charge	Qrr	IF= 40A, VR = 600V, di/dt= 400A/s, Tj = 25C	-	530	-	nC
Maximum Ratings
Collector-Emitter Breakdown Voltage	VCE	-	-	1200	-	V
DC collector current	IC	TC = 25C	-	80	-	A
DC collector current	IC	TC = 100C	-	40	-	A
Diode Forward current	IF	TC = 25C	-	80	-	A
Diode Forward current	IF	TC = 100C	-	40	-	A
Pulsed Collector Current	ICpuls	limited by Tjmax	-	160	-	A
Diode Pulsed Current	IFpuls	limited by Tjmax	-	160	-	A
Short Circuit Withstand Time	Tsc	VGE= 15V, VCE 600V	-	10	-	s
Power dissipation	Ptot	Tj=25	-	416	-	W
Operating junction temperature	Tj	-	-40	-	150	C
Storage temperature	Ts	-	-55	-	150	C
Soldering temperature	-	wave soldering 1.6mm from case for 10s	-	-	260	C
Thermal Resistance
IGBT thermal resistance, junction - case	R(j-c)	-	-	-	0.3	K/W
Diode thermal resistance, junction - case	R(j-c)	-	-	-	0.6	K/W
Thermal resistance, junction - ambient	R(j-a)	-	-	-	40	K/W