Power Electronics N Channel MOSFET Slkor SL90N20P with Fast Switching and Avalanche Tested Reliability

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Product Description

Product Overview

This N-Channel MOSFET offers fast switching, 100% avalanche tested performance, and improved dv/dt capability. It is designed for high-power applications including Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) systems.

Product Attributes

Brand: SLKORMicro
Model: SL90N20P
Package Type: TO-247

Technical Specifications

Parameter	Symbol	Test Conditions	Value	Unit
Drain-Source Breakdown Voltage	V(BR)DSS	VGS= 0V, ID = 250A	220	V
Continuous Drain Current	ID	VGS = 10V, TC = 25C (note1)	80	A
Pulsed Drain Current	IDM		320	A
Gate-Source Voltage	VGSS		20	V
Single Pulse Avalanche Energy	EAS	L = 10mH, VDD = 50V, RG = 25 , Starting TJ = 25 C (note2)	1960.2	mJ
Avalanche Current	IAS	(note1)	19.8	A
Repetitive Avalanche Energy	EAR	(note1)	1176.1	mJ
Power Dissipation	PD	TC = 25C	140	W
Peak Diode Recovery dv/dt	dv/dt	(note1)	5.0
Operating Junction and Storage Temperature Range	TJ, Tstg		-55~+150	C
Thermal Resistance, Junction-to-Case	RthJC		0.89	C/W
Thermal Resistance, Junction-to-Ambient	RthJA		60	C/W
Zero Gate Voltage Drain Current	IDSS	VDS = 40V, VGS= 0V, TJ = 25C	1	A
Zero Gate Voltage Drain Current	IDSS	VDS = 32V, VGS= 0V, TJ = 125C	100	A
Gate-Source Leakage	IGSS	VGS= 20V	100	nA
Gate-Source Threshold Voltage	VGS(th)	VDS = VGS , ID = 250A	4.0	V
Drain-Source On-Resistance	RDS(on)	VGS= 10V, ID = 95A(Note3,4)	35	m
Input Capacitance	Ciss	VGS = 0V, VDS = 25V, f = 1.0MHz	57-84	pF
Output Capacitance	Coss	VGS = 0V, VDS = 25V, f = 1.0MHz	8-93	pF
Reverse Transfer Capacitance	Crss	VGS = 0V, VDS = 25V, f = 1.0MHz	5-61	pF
Total Gate Charge	Qg	VDD = 20V, ID = 190A, VGS = 10V (Note4)	67	nC
Gate-Source Charge	Qgs	VDD = 20V, ID = 190A, VGS = 10V (Note4)	33.8	nC
Gate-Drain Charge	Qgd	VDD = 20V, ID = 190A, VGS = 10V (Note4)	17.7	nC
Turn-on Delay Time	td(on)	VDD = 20V, ID =190A, RG = 10 , VGS = 10V (Note4)	5	ns
Turn-on Rise Time	tr	VDD = 20V, ID =190A, RG = 10 , VGS = 10V (Note4)	65	ns
Turn-off Delay Time	td(off)	VDD = 20V, ID =190A, RG = 10 , VGS = 10V (Note4)	150	ns
Turn-off Fall Time	tf	VDD = 20V, ID =190A, RG = 10 , VGS = 10V (Note4)	167	ns
Continuous Body Diode Current	IS	TC = 25 C	80	A
Pulsed Body Diode Forward Current	ISM		320	A
Body Diode Voltage	VSD	TJ = 25C, ISD = 95A, VGS = 0V	1.4	V
Reverse Recovery Time	trr	VGS = 0V,IS = 190A, diF/dt =100A /s	60	ns
Reverse Recovery Charge	Qrr	VGS = 0V,IS = 190A, diF/dt =100A /s	5.61	C