SCR device ST X00619MN5AL2 suitable for overvoltage crowbar and ground fault interrupter applications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Description
The X00619 SCR is designed for on/off functions in applications where high gate triggering current is not available. It offers optimized forward voltage drop and inrush current capabilities, leading to reduced power losses and enhanced reliability in demanding environments. This device is ideal for limited gate current topologies, ground fault circuit interrupters, overvoltage crowbar protection in power supplies, protection in electronic ballasts, capacitive discharge ignitions, and ignitors for lighting and ovens.
Product Attributes
- Brand: STMicroelectronics
- ECOPACK2 compliant
- Lead-free plating + halogen-free molding resin
- Epoxy meets UL94, V0
Technical Specifications
| Part Number | IT(RMS) | VDRM/VRRM | IGT | Tjmax. | Package |
|---|---|---|---|---|---|
| X00619 | Up to 0.8 A | 600 V | 30 to 200 A | 125 C | TO-92, SOT-223 |
| Symbol | Parameter | Value (TO-92, TL = 83 C) | Value (SOT-223, Tamb = 107 C) | Unit |
|---|---|---|---|---|
| IT(RMS) | On-state RMS current (180 conduction angle) | 0.8 | - | A |
| IT(AV) | Average on-state current (180 conduction angle) | 0.5 | - | A |
| ITSM | Non repetitive surge peak on-state current (tp = 8.3 ms) | 10 | - | A |
| I2t | I2t value for fusing (tp = 10 ms) | 0.4 | - | As |
| dV/dt | Critical rate of rise of on-state current | 50 | - | A/s |
| IGTM | Peak gate current (tp = 20 s) | 1 | - | A |
| PG(AV) | Average gate power dissipation | 0.1 | - | W |
| Tstg | Storage junction temperature range | -40 to +150 | C | |
| Tj | Operating junction temperature range | -40 to +125 | C | |
| Symbol | Parameter | Test Conditions | Min. | Max. | Unit |
|---|---|---|---|---|---|
| IGT | Triggering gate current | VD = 12 V, RL = 140 | 30 | 200 | A |
| VGT | Gate trigger voltage | VD = 12 V, RL = 140 | - | 0.8 | V |
| VGD | Gate non-trigger voltage | VD = VDRM, RL = 3.3 k, RGK = 1 k, Tj = 125 C | 0.2 | - | V |
| IH | Holding current | IT = 50 mA, RGK = 1 k | - | 5 | mA |
| IL | Latching current | IG = 1 mA, RGK = 1 k | - | 6 | mA |
| dV/dt | Static dV/dt | VD = 67 % VDRM, RGK = 1 k, Tj = 125 C | 40 | - | V/s |
| VTM | On-state voltage | ITM = 1 A, tp = 380 s | - | 1.35 | V |
| IDRM | Off-state current | VDRM = VRRM, RGK = 1 k, Tj = 25 C | - | 1 | A |
| IRRM | Off-state current | VDRM = VRRM, RGK = 1 k, Tj = 125 C | - | 100 | A |
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Sellina