Low VF and Capacitance Schottky Diode Taiwan Semiconductor BAS40-06 RFG for Surface Mount Technology

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Product Description

Product Overview

The BAS40 series are 200mW, low VF SMD Schottky Barrier Diodes designed for surface mounting. They feature low capacitance, low forward voltage drop, and low stored charge, making them suitable for applications such as adapters and switching power supplies. These diodes are compliant with RoHS directive 2011/65/EU and WEEE 2002/96/EC, and are halogen-free.

Product Attributes

Brand: Taiwan Semiconductor
Series: BAS40 / -04 / -05 / -06
Material: Molding compound UL flammability classification rating 94V-0
Certifications: RoHS directive 2011/65/EU, WEEE 2002/96/EC, Halogen-free according to IEC 61249-2-21, JESD 201 class 1A whisker test
Color: Green compound (halogen-free) when packing code suffix "G" is used
Package: SOT-23
Moisture Sensitivity Level: Level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per J-STD-002

Technical Specifications

Parameter	Symbol	BAS40	BAS40-04	BAS40-05	BAS40-06	Unit	Conditions
Repetitive peak reverse voltage	VRRM	40				V
Forward current	IF(AV)	200				mA
Non-repetitive peak forward surge current @ t = 8.3ms	IFSM	0.6				A
Junction temperature range	TJ	-65 to +125				C
Storage temperature range	TSTG	-65 to +125				C
Marking code on the device		43	44	45	46
Forward voltage per diode	VF	-				V	IF = 1mA, TJ = 25C
Forward voltage per diode	VF	1.00				V	IF = 40mA, TJ = 25C
Reverse current @ rated VR per diode	IR	- 0.2				A	VR=30V TJ = 25C
Reverse Breakdown Voltage	V(BR)	40 -				V	IR=10A
Junction capacitance	CJ	- 5.0				pF	1 MHz, VR=1V
Reverse Recovery Time	trr	- 5.0				ns	IF=IR=10mA, RL=100, IRR=1mA
Junction-to-ambient thermal resistance	RJA	357				C/W