NPN transistor ST Semtech PZTA42Q designed for high voltage switching and amplification applications

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Product Description

Product Overview

The PZTA42Q-HAF is an NPN Silicon Epitaxial Planar High Voltage Transistor designed for various electronic applications. It features Halogen and Antimony Free (HAF) compliance and is RoHS compliant, offering an environmentally conscious solution. This transistor boasts high voltage capabilities with a Collector Emitter Voltage (VCEO) of 300V and a Collector Current (IC) of up to 500mA, making it suitable for high-voltage switching and amplification circuits.

Product Attributes

Brand: (Implied by logo)
Certifications: Halogen and Antimony Free (HAF), RoHS compliant

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Absolute Maximum Ratings
Collector Base Voltage	VCBO	300	V
Collector Emitter Voltage	VCEO	300	V
Emitter Base Voltage	VEBO	6	V
Collector Current	IC	500	mA
Power Dissipation	Ptot	1.5	W
Operating Junction Temperature Range	Tj	-55 to +150
Storage Temperature Range	Tstg	-55 to +150
Thermal Resistance Ratings
Thermal Resistance from Junction to Ambient	RJA	83.3	/W	1) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
Characteristics at Ta = 25
DC Current Gain (VCE = 10 V, IC = 1 mA)	hFE	25	-
DC Current Gain (VCE = 10 V, IC = 10 mA)	hFE	40	-
DC Current Gain (VCE = 10 V, IC = 30 mA)	hFE	40	-
Collector Base Cutoff Current (VCB = 200 V)	ICBO	-100	nA
Emitter Base Cutoff Current (VEB = 6 V)	IEBO	-100	nA
Collector Emitter Breakdown Voltage (IC = 1 mA)	V(BR)CEO	300	V
Collector Base Breakdown Voltage (IC = 100 A)	V(BR)CBO	300	V
Emitter Base Breakdown Voltage (IE = 100 A)	V(BR)EBO	6	V
Collector Emitter Saturation Voltage (IC = 20 mA, IB = 2 mA)	VCE(sat)	-500	mV
Base Emitter Saturation Voltage (IC = 20 mA, IB = 2 mA)	VBE(sat)	-900	mV
Current Gain Bandwidth Product (VCE = 20 V, IC = 10 mA, f = 100 MHz)	fT	50	MHz
Collector Output Capacitance (VCB = 20 V, IE = 0, f = 1 MHz)	Cob	-3	pF