High speed high voltage transistor WeEn PHE13005127 for in electronic lighting ballast applications

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Product Description

Product Overview

The PHE13005 is a high voltage, high speed NPN planar-passivated power switching transistor designed for electronic lighting ballast applications. It offers fast switching and high voltage capability, making it suitable for demanding electronic lighting systems.

Product Attributes

Brand: WeEn Semiconductors
Material: Silicon diffused
Package Type: SOT78 (TO-220AB)

Technical Specifications

Symbol	Parameter	Conditions	Values	Unit
Absolute Maximum Ratings
VCESM	Peak collector-emitter voltage	VBE = 0 V	700	V
VCBO	Collector-base voltage	IE = 0 A	700	V
VCEO	Collector-emitter voltage	IB = 0 A	400	V
IC	Collector current (DC)	DC; Fig. 1; Fig. 2; Fig. 4	4	A
ICM	Peak collector current		8	A
IB	Base current (DC)		2	A
IBM	Peak base current		4	A
Ptot	Total power dissipation	Tmb 25 C; Fig. 3	75	W
Tstg	Storage temperature		-65 to 150	C
Tj	Junction temperature		150	C
VEBO	Emitter-base voltage	IC = 0 A	9	V
Static Characteristics
ICES	Collector-emitter cut-off current	VBE = -1.5 V; VCE = 700 V; Tmb = 25 C	-	1 mA
ICES	Collector-emitter cut-off current	VBE = -1.5 V; VCE = 700 V; Tj = 125 C	-	5 mA
ICBO	Collector-base cut-off current	VCB = 700 V; IE = 0 A; Tmb = 25 C	-	1 mA
ICEO	Collector-emitter cut-off current	VCEO = 400 V; IB = 0 A; Tmb = 25 C	-	0.1 mA
IEBO	Emitter-base cut-off current	VEB = 9 V; IC = 0 A; Tmb = 25 C	-	1 mA
VCEOsus	Collector-emitter sustaining voltage	IB = 0 A; IC = 10 mA; LC = 25 mH; Tmb = 25 C; Fig. 6; Fig. 7	400	V
VCEsat	Collector-emitter saturation voltage	IC = 1.0 A; IB = 0.2 A; Tmb = 25 C; Fig. 8; Fig. 9	-	0.5 V
VCEsat	Collector-emitter saturation voltage	IC = 2.0 A; IB = 0.5 A; Tmb = 25 C; Fig. 8; Fig. 9	-	0.6 V
VCEsat	Collector-emitter saturation voltage	IC = 4.0 A; IB = 1.0 A; Tmb = 25 C; Fig. 8; Fig. 9	-	1 V
VBEsat	Base-emitter saturation voltage	IC = 1.0 A; IB = 0.2 A; Tmb = 25 C; Fig. 10	-	1.2 V
VBEsat	Base-emitter saturation voltage	IC = 2.0 A; IB = 0.5 A; Tmb = 25 C; Fig. 10	-	1.6 V
hFE	DC current gain	IC = 1 A; VCE = 5 V; Tmb = 25 C; Fig. 11	12 to 40
hFE	DC current gain	IC = 2 A; VCE = 5 V; Tmb = 25 C; Fig. 11	10 to 28
Dynamic Characteristics
ts	Storage time	IC = 2 A; IBon = 0.4 A; IBoff = -0.4 A; RL = 75 ; Tmb = 25 C; resistive load; Fig. 12; Fig. 13	-	4 s
ts	Storage time	IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tmb = 25 C; inductive load; Fig. 14; Fig. 15	-	2 s
ts	Storage time	IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tmb = 100 C; inductive load; Fig. 14; Fig. 15	-	4 s
tf	Fall time	IC = 2 A; IBon = 0.4 A; IBoff = -0.4 A; RL = 75 ; Tmb = 25 C; resistive load; Fig. 12; Fig. 13	-	0.9 s
tf	Fall time	IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tmb = 25 C; inductive load; Fig. 14; Fig. 15	-	0.5 s
tf	Fall time	IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tmb = 100 C; inductive load; Fig. 14; Fig. 15	-	0.9 s
Thermal Characteristics
Rth(j-mb)	Thermal resistance from junction to mounting base	Fig. 5	-	1.67 K/W
Rth(j-a)	Thermal resistance from junction to ambient	in free air	-	60 K/W