N Channel Power MOSFET SLkor SL80N10 100V 80A Low RDS ON TO 220 Package for Industrial Power Systems
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Product Description
Product Overview
The SL80N10 is a high-performance N-Channel Power MOSFET designed for power switching applications. It features a VDS of 100V and a continuous ID of 80A, with an ultra-low RDS(ON) of less than 9m at VGS=10V. This MOSFET utilizes special process technology for high ESD capability and a high-density cell design for reduced on-resistance. It is fully characterized for avalanche voltage and current, offering good stability and uniformity with high EAS. The robust package ensures excellent heat dissipation, making it suitable for hard-switched and high-frequency circuits, as well as uninterruptible power supplies.
Product Attributes
- Brand: SLKORMicro
- Model: SL80N10
- Package Type: TO-220-3L
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | (TC=25) | 80 | A | ||
| Drain Current-Continuous | ID (100) | (TC=100) | 70.7 | A | ||
| Pulsed Drain Current | IDM | 350 | A | |||
| Maximum Power Dissipation | PD | 188 | W | |||
| Derating factor | 1.33 | W/ | ||||
| Single pulse avalanche energy | EAS | (Note 5) | 61 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | (Note 2) | 0.8 | /W | ||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1.2 | - | 2.3 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=40A | - | 6.6 | 9 | m |
| Forward Transconductance | gFS | VDS=50V,ID=40A | - | 85 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | - | 3320 | - | PF | |
| Output Capacitance | Coss | - | 605 | - | PF | |
| Reverse Transfer Capacitance | Crss | VDS=50V,VGS=0V, F=1.0MHz | - | 20 | - | PF |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=50V,ID=40A VGS=10V,RGEN=2.5 | - | 10 | - | nS |
| Turn-on Rise Time | tr | - | 6.5 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 45 | - | nS | |
| Turn-Off Fall Time | tf | - | 7.5 | - | nS | |
| Total Gate Charge | Qg | - | 45 | - | nC | |
| Gate-Source Charge | Qgs | - | 9.5 | - | nC | |
| Gate-Drain Charge | Qgd | VDS=80V,ID=40A, VGS=10V | - | 4.8 | - | nC |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=40A | - | - | 1.2 | V |
| Diode Forward Current | IS | (Note 2) | - | - | 57 | A |
| Reverse Recovery Time | trr | TJ = 25C, IF = 40A di/dt = 100A/s(Note3) | - | 18.6 | - | nS |
| Reverse Recovery Charge | Qrr | - | 65 | - | nC | |
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