Planar passivated SCR WeEn WCR03-12MEP suitable for ground fault and arc fault circuit interrupters
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
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Product Description
Product Overview
The WCR03 Series SCR is a planar passivated SCR with a sensitive gate, available in both surface mountable (SOT223) and through-hole (TO92) plastic packages. Designed for direct interfacing with microcontrollers, logic integrated circuits, and other low-power gate trigger circuits, this SCR offers high surge current capability and voltage ruggedness. It is ideal for applications such as Ground Fault Circuit Interrupters (GFCI), Arc Fault Circuit Interrupters (AFCI), Residual Current Devices (RCD), and Residual Current Circuit Breakers with Overload Protection (RCBO).
Product Attributes
- Brand: WeEn Semiconductors
- Certifications: RoHS, Lead-Free, Green halogen-Free
Technical Specifications
| Symbol | Parameter | Conditions | Values | Unit |
| Limiting Values | ||||
| VDRM, VRRM | Repetitive peak off-state/reverse voltage | RGK = 1 k; Tj(init) = 25 C | 1250 | V |
| IT(AV) | Average on-state current | half sine wave; Tlead 83 C (TO92) / Tc 110 C (SOT223) | 0.8 / 1.25 | A |
| ITSM | Non-repetitive peak on-state current | half sine wave; Tj(init) = 25 C; tp = 10 ms | 20 | A |
| ITSM | Non-repetitive peak on-state current | half sine wave; Tj(init) = 25 C; tp = 8.3 ms | 22 | A |
| It | It for fusing | tp = 10 ms; sine-wave pulse | 2 | As |
| dIT/dt | Rate of rise of on-state current | IG = 0.2 mA | 100 | A/s |
| IGM | Peak gate current | 1.2 | A | |
| PGM | Peak gate power | 2 | W | |
| PG(AV) | Average gate power | over any 20 ms period | 0.2 | W |
| Tstg | Storage temperature | -40 to 150 | C | |
| Tj | Junction temperature | -40 to 125 | C | |
| Electrical Characteristics | ||||
| IGT | Gate trigger current | VD = 12 V; RL = 100 ; Tj = 25 C | 90 | A |
| VGT | Gate trigger voltage | VD = 12 V; RL = 100 ; Tj = 25 C | 0.8 | V |
| VRG | Gate reverse voltage | IRG = 2 mA | 10 | V |
| IL | Latching current | IT = 0.1 A; RGK = 1 k; Tj = 25 C | 6 | mA |
| IH | Holding current | VD = 12 V; RGK = 1 k; Tj = 25 C | 5 | mA |
| VT | On-state voltage | IT = 1.25 A; Tj = 25 C | 1.3 | V |
| ID | Off-state current | VD = VDRM / VRRM; RGK = 1 k; Tj = 25 C | 1 | A |
| IR | Reverse current | Tj = 125 C | 100 | A |
| dVD/dt | Rate of rise of off-state voltage | VDM = 838 V; Tj = 125 C; RGK = 1 k; (VDM = 67% of VDRM); exponential waveform | 200 | V/s |
| Thermal Characteristics | ||||
| Rth(j-l) | Thermal resistance junction to lead | TO92 | 40 | K/W |
| Rth(j-c) | Thermal resistance junction to case | SOT223 | 14 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air; TO92 | 130 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air; SOT223 | 120 | K/W |
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Sellina