PNP transistor Suzhou Good-Ark Elec GSBCX53-16 designed for operation in low voltage high current circuits

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Product Description

Product Overview

The GSBCX51, GSBCX52, and GSBCX53 are PNP transistors designed for low voltage, high current applications. They serve as medium power general-purpose devices and are suitable for driver stages in audio amplifiers. These transistors are NPN complements to the GSBCX54, GSBCX55, and GSBCX56 series.

Product Attributes

Brand: Goodark Semiconductor (implied by URL)
Package Type: SOT-89-3L
Certifications: RoHS Compliant

Technical Specifications

Parameter	Symbol	GSBCX51	GSBCX52	GSBCX53	Unit	Test Conditions
Collector-Emitter Voltage	VCEO	-45	-60	-100	V	IC=-10mA, IB=0
Collector-Base Voltage	VCBO	-45	-60	-80	V	IE=-100A, IC=0
Emitter-Base Voltage	VEBO	-5	-5	-5	V	IC=0
Collector Current	IC	-1	-1	-1	A
Collector Power Dissipation	PC	500	500	500	mW	TA=25C
Junction Temperature	TJ	150	150	150
Storage Temperature	TSTG	-55 to +150	-55 to +150	-55 to +150
Thermal Resistance Junction To Ambient	RJA	250	250	250	/W
Collector-Emitter Breakdown Voltage	V(BR)CEO	-45	-60	-80	V	IC=-10mA, IB=0
Collector-Base Breakdown Voltage	V(BR)CBO	-45	-60	-100	V	IC=-100A, IE=0
Emitter-Base Breakdown Voltage	V(BR)EBO	-5	-5	-5	V	VEB=-5V,IC=0
DC Current Gain	hFE(1)	63	63	63		VCE=-5V,IC=-10mA , f=100MHz
DC Current Gain	hFE(2)	63-250	63-160	100-250		VCE=-2V, IC=-0.5A
DC Current Gain	hFE(3)	40	40	40		IC=-0.5A,IB=-50mA
Collector-Emitter Saturation Voltage	VCE(sat)	-0.5	-0.5	-0.5	V	IC=-0.5A,IB=-50mA
Base -Emitter Voltage	VBE	-1	-1	-1	V	VCE=-2V, IC=-0.5A
Transition Frequency	fT	50	50	50	MHz	VCE=-2V, IC=-150mA
Collector Cut- Off Current	ICBO	-0.1	-0.1	-0.1	A	VCB=-30V,IE=0
Emitter Cut-Off Current	IEBO	-0.1	-0.1	-0.1	A	IE=-100A,IC=0