Surface mount NPN transistor WeEn BUJ302AD118 featuring planar passivation and SOT428 DPAK package design

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Product Description

Product Overview

The BUJ302AD is a high voltage, high speed NPN power switching transistor designed for surface mounting. It features planar passivation, a SOT428 (DPAK) package, and offers very high voltage capability with low thermal resistance. Its fast switching speed and low conduction losses make it suitable for demanding applications.

Product Attributes

Brand: WeEn Semiconductors
Package Type: SOT428 (DPAK)

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
ICM	peak collector current	Fig. 1; Fig. 2; Fig. 3	-	-	8	A
Ptot	total power dissipation	Tmb ≤ 25 °C; Fig. 4	-	-	80	W
VCESM	collector-emitter peak voltage	VBE = 0 V	-	-	1050	V
hFE	DC current gain	IC = 0.1 A; VCE = 5 V; Tmb = 25 °C; Fig. 11	48	66	100	-
hFE	DC current gain	IC = 0.8 A; VCE = 3 V; Tmb = 25 °C; Fig. 12	25	42	50	-
VCESM	collector-emitter peak voltage	VBE = 0 V	-	-	1050	V
VCEO	collector-emitter voltage	IB = 0 A	-	-	400	V
VEBO	emitter-base voltage	IC = 0 A; IE = 2 A; tp < 10 ms	-	24	-	V
IC	collector current	-	-	-	4	A
ICM	peak collector current	Fig. 1; Fig. 2; Fig. 3	-	-	8	A
IB	base current	-	-	-	2	A
IBM	peak base current	-	-	-	4	A
Ptot	total power dissipation	Tmb ≤ 25 °C; Fig. 4	-	-	80	W
Tstg	storage temperature	-	-65	-	150	°C
Tj	junction temperature	-	-	-	150	°C
Rth(j-mb)	thermal resistance from junction to mounting base	Fig. 5	-	-	1.56	K/W
Rth(j-a)	thermal resistance from junction to ambient	free air printed circuit board (FR4) mounted; minimum footprint	-	75	-	K/W
ICES	collector-emitter cut-off current	VBE = 0 V; VCE = 1050 V	-	0.2	10	µA
ICEO	collector-emitter cut-off current	VCE = 400 V; IB = 0 A; Tmb = 25 °C	-	10	250	mA
V(BR)EBO	emitter-base breakdown voltage	IB = 1 mA; IC = 0 A; Tmb = 25 °C	15	19	-	V
VCEOsus	collector-emitter sustaining voltage	IB = 0 A; IC = 10 mA; LC = 25 mH; Tmb = 25 °C; Fig. 6; Fig. 7	400	470	-	V
VCEsat	collector-emitter saturation voltage	IC = 1 A; IB = 0.2 A; Tmb = 25 °C; Fig. 8; Fig. 9	-	0.15	0.5	V
VCEsat	collector-emitter saturation voltage	IC = 3.5 A; IB = 1 A; Tmb = 25 °C; Fig. 8; Fig. 9	-	0.6	1.5	V
VBEsat	base-emitter saturation voltage	IC = 3.5 A; IB = 1 A; Tmb = 25 °C; Fig. 10	-	1.1	1.5	V
hFE	DC current gain	IC = 0.1 A; VCE = 5 V; Tmb = 25 °C; Fig. 11	48	66	100	-
hFE	DC current gain	IC = 0.8 A; VCE = 3 V; Tmb = 25 °C; Fig. 12	25	42	50	-
ts	storage time	IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 60 Ω; VBB = -5 V; Tmb = 25 °C; resistive load; tp = 300 µs; Fig. 13; Fig. 14	-	-	3.5	µs
tf	fall time	IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 60 Ω; VBB = -5 V; Tmb = 25 °C; resistive load; tp = 300 µs; Fig. 13; Fig. 14	-	-	500	ns