Power MOSFET Slkor SL160N03R with 160A Continuous Drain Current and High Energy Pulse Resistance
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Delivery Time:
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Product Description
Product Overview
This Power MOSFET utilizes advanced TRENCH technology to minimize conduction loss, enhance switching performance, and provide superior resistance to high energy pulses in avalanche and commutation modes. It is designed for applications requiring efficient power management, including PWM applications, load switching, and general power management tasks.
Product Attributes
- Certifications: 100% avalanche tested, 100% UIS TESTED!, 100% Vds TESTED!
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
| Drain-source Voltage | VDS | 30 | V | |
| Gate-source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 160 | A | TC=25°C |
| Continuous Drain Current | ID | 104 | A | TC=100°C |
| Pulsed Drain Current | IDM | 640 | A | TC=25°C, Tp Limited By Tjmax (note1) |
| Maximum Power Dissipation | PD | 50 | W | TC=25°C |
| Avalanche energy, single Pulse | EAS | 870 | mJ | L=0.5mH (note2) |
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | (note3) |
| Drain-source breakdown voltage | BVDSS | 30 | V | VGS=0V, ID=250µA |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=30V, VGS=0V |
| Zero gate voltage drain current | IDSS | 50 | µA | VDS=24V, TC =125°C |
| Gate-source leakage current | IGSS | ±100 | nA | VGS=±20V, VDS=0V |
| Gate threshold voltage | VGS(th) | 1.0 - 2.2 | V | VDS=VGS, ID=250µA |
| Drain-source on-state resistance | RDS(on) | 1.5 - 2.0 | mΩ | VGS=10V, ID=20A |
| Input Capacitance | Ciss | 7710 | PF | VGS=0V, VDS=30V, f=1.0MHz |
| Output Capacitance | Coss | 845 | PF | VGS=0V, VDS=30V, f=1.0MHz |
| Reverse Transfer Capacitance | Crss | 838 | PF | VGS=0V, VDS=30V, f=1.0MHz |
| Turn-on delay time | td(on) | 18 | nS | VGS=10V, VDS=30V, ID=30A, RG=25Ω |
| Turn-on Rise time | tr | 10 | nS | VGS=10V, VDS=30V, ID=30A, RG=25Ω |
| Turn-off delay time | td(off) | 64 | nS | VGS=10V, VDS=30V, ID=30A, RG=25Ω |
| Turn-off Fall time | tf | 16 | nS | VGS=10V, VDS=30V, ID=30A, RG=25Ω |
| Gate Total Charge | QG | 142 | nC | VGS=10V, VDS=30V, ID=30A |
| Gate-Source Charge | QgS | 92 | nC | VGS=10V, VDS=30V, ID=30A |
| Gate-Drain Charge | QgD | 18 | nC | VGS=10V, VDS=30V, ID=30A |
| Body Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, ISD=20A, TJ =25°C |
| Body Diode Forward Current | Is | 160 | A | |
| Body Diode Reverse Recovery Time | Trr | 30 | ns | TJ=25°C, ISD=20A, VGS=0V, di/dt =100A/μs |
| Body Diode Reverse Recovery Charge | Qrr | 22 | nC | TJ=25°C, ISD=20A, VGS=0V, di/dt =100A/μs |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina