China Loss PNP Transistor Taiwan Semiconductor BC856B RFG with High Surge Current and Halogen Free Material for sale

Loss PNP Transistor Taiwan Semiconductor BC856B RFG with High Surge Current and Halogen Free Material

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Price: Negotiable

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Delivery Time: Negotiable

Product Description

Product Overview

The BC856A/B, BC857A/B/C, and BC858A/B/C are PNP small signal transistors from Taiwan Semiconductor. These devices offer low power loss and high efficiency, making them ideal for automated placement. They feature high surge current capability, are moisture sensitive level 1 per J-STD-020, and are RoHS compliant and Halogen-free.

Product Attributes

Brand: Taiwan Semiconductor
Certifications: RoHS Compliant, Halogen-free according to IEC 61249-2-21, Moisture sensitivity level: level 1, per J-STD-020
Material: Molding compound meets UL 94 V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002, Meet JESD 201 class 1A whisker test

Technical Specifications

Parameter	Symbol	BC856	BC857	BC858	Unit
Collector-base voltage	VCBO	-80	-50	-30	V
Collector-emitter voltage	VCEO	-65	-45	-30	V
Emitter-base voltage	VEBO	-5	-5	-5	V
Collector current	IC	-0.1	-0.1	-0.1	A
Power dissipation	PD	200	200	200	mW
Junction temperature	TJ	-55 to +150	-55 to +150	-55 to +150	C
Storage temperature	TSTG	-55 to +150	-55 to +150	-55 to +150	C
Collector cutoff current (VCB = -70V for BC856, VCB = -45V for BC857, VCB = -25V for BC858, IE = 0)	ICBO	-100	-100	-100	nA
Emitter cutoff current (VEB = -5V, IC = 0)	IEBO	-0.1	-0.1	-0.1	A
DC current gain (VCE= -5V, IC = -2mA)	hFE	125-250 (A), 220-475 (B), 420-800 (C)	125-250 (A), 220-475 (B), 420-800 (C)	125-250 (A), 220-475 (B), 420-800 (C)
Collector-emitter saturation voltage (IC = -100 mA, IB = -5 mA)	VCE(sat)	-0.65	-0.65	-0.65	V
Base-emitter saturation voltage (IC = -100 mA, IB = -5 mA)	VBE(sat)	-1.10	-1.10	-1.10	V
Transition frequency (VCE = -5V , IC = -10mA, f= 100MHz)	fT	100	100	100	MHz