WEIDA T835 triacs offering 80 ampere surge peak on state current for demanding electrical environments

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Product Description

Jiangsu Weida Semiconductor Co., Ltd. T8**H 8A High Junction Temperature Triacs

The T8**H series triacs from Jiangsu Weida Semiconductor Co., Ltd. are designed for high junction temperature applications, offering a high dv/dt rate and robust resistance to electromagnetic interference. These triacs excel in handling shock loading of large currents and are particularly recommended for inductive loads and high ambient temperature environments.

Product Attributes

Brand: Jiangsu Weida Semiconductor Co., Ltd.
Product Line: T8**H
Type: High Junction Temperature Triacs

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Storage junction temperature range	Tstg	-40~150
Operating junction temperature range	Tj	-40~150
Repetitive peak off-state voltage	VDRM/VRRM	800/1000	V	Tj=25
RMS on-state current	IT(RMS)	8.0	A
Non repetitive surge peak on-state current	ITSM	80	A	Full cycle, F=50Hz
I2t value for fusing	I2t	32	A2s	tp=10ms
Critical rate of rise of on-state current	dI/dt	50	A/s	IG=2IGT
Peak gate current	IGM	4	A
Average gate power dissipation	PG(AV)	1	W
Peak gate power	PGM	5	W
Gate Trigger Current (max)	IGT	10, 20, 35, 50	mA	VD=12V, RL=33, Quadrant --
Gate Trigger Voltage (max)	VGT	1.5	V
Gate Voltage Dark (min)	VGD	0.2	V	VD=VDRM, Quadrant --
Holding Current (max)	IH	20, 30, 45, 60	mA	IT=100mA, Quadrant -
Latching Current (max)	IL	25, 40, 50, 70 (-); 35, 55, 70, 90 ()	mA	IG=1.2IGT
Critical rate of rise of off-state voltage	dV/dt	200, 500, 1000, 1500	V/s	VD=2/3VDRM, Tj=125, Gate open
On-state voltage (max)	VTM	1.5	V	ITM=11A, tp=380s, Tj=25
Off-state current (max)	IDRM/IRRM	5 (Tj=25); 1 (Tj=125)	A	VDRM= VRRM
Junction to case thermal resistance	Rth(j-c)	2.0, 2.8, 2.9, 3.1, 3.0	/W	AC; Varies by package type