Triac 4A 600V repetitive peak voltage WEIDA BTB04-600CW with strong EMI resistance and high dvdt rate
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Product Description
Product Overview
The Jiangsu Weida Semiconductor BTA04/BTB04 Series 4A Triacs are designed for high shock loading capability with a large current capacity. They offer a high dv/dt rate, strong resistance to electromagnetic interference, and excellent commutation performance, making them particularly suitable for inductive loads in 3-quadrant applications. The BTA04 series provides a rated insulation voltage of 2500 VRMS, complying with UL standards.
Product Attributes
- Brand: Jiangsu Weida Semiconductor Co., Ltd.
- Product Series: BTA04/BTB04
- Certifications: UL Standards (File ref: E516503)
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| RMS on-state current | IT(RMS) | 4 | A | |
| Repetitive peak off-state voltage | VDRM/VRRM | 600/800 | V | (Tj=25) |
| On-state voltage | VTM | ≤1.5 | V | (ITM=5.5A, tp=380s, Tj=25) |
| Storage junction temperature range | Tstg | -40~150 | ||
| Operating junction temperature range | Tj | -40~125 | ||
| Non repetitive surge peak on-state current | ITSM | 40 | A | (full cycle, F=50Hz) |
| I2t value for fusing | I2t | 8 | A2s | (tp=10ms) |
| Critical rate of rise of on-state current | dI/dt | 50 | A/s | (IG=2×IGT) |
| Peak gate current | IGM | 4 | A | |
| Average gate power dissipation | PG(AV) | 1 | W | |
| Peak gate power | PGM | 5 | W | |
| Repetitive peak off-state current | IDRM | MAX 5 | µA | (VDRM, Tj=25) |
| Repetitive peak reverse current | IRRM | MAX 5 | µA | (VRRM, Tj=25) |
| Repetitive peak off-state current | IDRM | 0.5 | mA | (VDRM, Tj=125) |
| Repetitive peak reverse current | IRRM | 0.5 | mA | (VRRM, Tj=125) |
| Gate Trigger Current | IGT | MAX 5, 10, 35, 50 | mA | (VD=12V, RL=33Ω, Quadrants --) |
| Gate Trigger Voltage | VGT | 1.5 | V | (VD=12V, RL=33Ω) |
| Gate Non-Trigger Voltage | VGD | MIN 0.2 | V | (VD=VDRM) |
| Holding Current | IH | MAX 6, 10, 35, 60 | mA | (IT=100mA, Quadrants -) |
| Latching Current | IL | MAX 10, 15, 50, 70 | mA | (IG=1.2IGT, Quadrants -) |
| Latching Current | IL | MAX 15, 25, 60, 80 | mA | (IG=1.2IGT, Quadrant ) |
| Critical rate of rise of commutating voltage | dV/dt | MIN 50, 100, 500, 1000 | V/µs | (VD=2/3VDRM, Tj=125, Gate open) |
| Gate Trigger Current | IGT | MAX 25, 50 | mA | (VD=12V, RL=33Ω, Quadrants --) |
| Gate Trigger Current | IGT | MAX 50, 70 | mA | (VD=12V, RL=33Ω, Quadrant ) |
| Gate Non-Trigger Voltage | VGD | MIN 0.2 | V | (VD=VDRM, ALL Quadrants) |
| Holding Current | IH | MAX 40, 60 | mA | (IT=100mA, ALL Quadrants) |
| Latching Current | IL | MAX 50, 70 | mA | (IG=1.2IGT, Quadrants --) |
| Latching Current | IL | MAX 70, 90 | mA | (IG=1.2IGT, Quadrant ) |
| Critical rate of rise of commutating voltage | dV/dt | MIN 200, 500 | V/µs | (VD=2/3VDRM, Tj=125, Gate open) |
| Junction to Case Thermal Resistance (AC) | Rth(j-c) | 2.5, 2.8, 3.1, 3.4 | /W | (TO-220B, TO-251-4R/TO-252-4R, TO-220A, TO-220F) |
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