Triac WEIDA BTB26-800CW rated 25 amp RMS current and 800 volt peak off state voltage for power control

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Product Description

Product Overview

The Jiangsu Weida Semiconductor BTA26/BTB26 Series 25A Triacs are designed for high current shock loading with excellent dv/dt rates and resistance to electromagnetic interference. These triacs offer superior commutation performance, making them ideal for inductive loads, particularly the 3-quadrant variants. The BTA26 series provides a rated insulation voltage of 2500 VRMS, compliant with UL standards.

Product Attributes

Brand: Jiangsu Weida Semiconductor Co., Ltd.
Series: BTA26/BTB26
Certifications: UL standards (File ref: E516503)

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
RMS On-State Current	IT(RMS)	25	A
Repetitive Peak Off-State Voltage	VDRM	600/800/1200/1600	V	(Tj=25)
Repetitive Peak Reverse Voltage	VRRM	600/800/1200	V	(Tj=25)
On-State Voltage (Max)	VTM	1.5	V	(ITM=35A, tp=380s, Tj=25)
Non-Repetitive Surge Peak On-State Current	ITSM	250	A	(Full cycle, F=50Hz)
I2t Value for Fusing	I2t	340	A2s	(tp=10ms)
Critical Rate of Rise of On-State Current	dI/dt	50	A/s	(IG=2IGT)
Peak Gate Current	IGM	4	A
Average Gate Power Dissipation	PG(AV)	1	W
Peak Gate Power	PGM	10	W
Storage Junction Temperature Range	Tstg	-40~150
Operating Junction Temperature Range	Tj	-40~125
Gate Trigger Current (Max)	IGT	25/35/50	mA	(VD=12V, RL=33, Quadrant dependent)
Gate Trigger Voltage (Max)	VGT	1.3/1.5	V	(Quadrant dependent)
Holding Current (Max)	IH	60-100	mA	(IT=100mA, Quadrant dependent)
Latching Current (Max)	IL	70-100	mA	(IG=1.2IGT, Quadrant dependent)
Critical Rate of Rise of Off-State Voltage	dV/dt	1000/1500/200/500	V/s	(Gate open, Tj=125, Quadrant dependent)
Off-State Current (Max)	IDRM/IRRM	10/3	A/mA	(VDRM=VRRM, Tj=25/125)
Junction to Case Thermal Resistance	Rth(j-c)	1.0-2.1	/W	(AC, Package dependent)