400V N Channel MOSFET Extended Safe Operating Area Wild Goose WGF11N40SE with Unrivalled Gate Charge
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Product Description
Product Overview
The WGF11N40SE is a 400V N-Channel MOSFET designed for applications requiring excellent switching characteristics and low intrinsic capacitances. It offers an extended safe operating area and an unrivalled gate charge of 28nC (Typ.). This MOSFET is 100% avalanche tested and is suitable for various power electronics applications.
Product Attributes
- Brand: WildGoose Semiconductor
- Model: WGF11N40SE
- Package Type: TO-220F
- Channel Type: N-Channel
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Low Intrinsic Capacitances | ||||||
| Excellent Switching Characteristics | ||||||
| Extended Safe Operating Area | ||||||
| Qg | Unrivalled Gate Charge | 28 | nC | |||
| VDSS | Drain-Source Voltage | 400 | V | |||
| ID | Drain Current | TC=25 | 11 | A | ||
| ID | Drain Current | TC=100 | 6.3 | A | ||
| RDS(on) | Static Drain-Source On-Resistance | ID=5.5A,VGS=10V | 0.43 | 0.50 | ||
| 100% Avalanche Tested | ||||||
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | (Ta=25) | 400 | V | ||
| ID | Drain Current | TC=25 | 11 | A | ||
| ID | Drain Current | TC=100 | 6.3 | A | ||
| VGSS | Gate-Source Voltage | (Ta=25) | 30 | V | ||
| EAS | Single Pulse Avalanche Energy | (note1) | 500 | mJ | ||
| IAR | Avalanche Current | (note2) | 11 | A | ||
| PD | Power Dissipation | (Tc=25) | 45 | W | ||
| Tj | Junction Temperature(Max) | 150 | ||||
| Tstg | Storage Temperature | -55 | +150 | |||
| TL | Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds | 300 | ||||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | - | - | - | /W | |
| RJA | Thermal Resistance, Junction to Ambient | - | - | 62.5 | /W | |
| RCS | Thermal Resistance, Case to Sink | 0.5 | - | - | /W | |
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | ID=250AVGS=0 | 400 | - | - | V |
| BVDSS/TJ | Breakdown Voltage Temperature Coefficient | ID=250A ,Reference to 25 | - | -0.55 | - | V/ |
| IDSS | Zero Gate Voltage Drain Current | VDS=400V, VGS=0V | - | - | 1 | A |
| IDSS | Zero Gate Voltage Drain Current | VDS=360V, Tc=125 | - | - | 10 | A |
| IGSSF | Gate-body leakage Current, Forward | VGS=+30V, VDS=0V | - | - | 100 | nA |
| IGSSR | Gate-body leakage Current, Reverse | VGS=-30V, VDS=0V | - | - | -100 | nA |
| On Characteristics | ||||||
| VGS(TH) | Gate Threshold Voltage | ID=250A,VDS=VGS | 2 | - | 4 | V |
| RDS(ON) | Static Drain-Source On-Resistance | ID=5.5A,VGS=10V | - | 0.43 | 0.50 | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25VVGS=0 f=1.0MHz | - | 1200 | - | pF |
| Coss | Output Capacitance | - | 150 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 20 | - | pF | |
| Switching Characteristics | ||||||
| Td(on) | Turn-On Delay Time | VDD=200VID=11A RG=12 (Note 3,4) | - | 14 | - | ns |
| Tr | Turn-On Rise Time | - | 25 | - | ns | |
| Td(off) | Turn-Off Delay Time | - | 44 | - | ns | |
| Tf | Turn-Off Rise Time | - | 28 | - | ns | |
| Qg | Total Gate Charge | VDS=200V,VGS=10V ID=11A (Note 3,4) | - | 28 | 35 | nC |
| Qgs | Gate-Source Charge | - | 7.0 | - | nC | |
| Qgd | Gate-Drain Charge | - | 11.0 | - | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Is | Max. Diode Forward Current | - | - | 11 | A | |
| Ism | Max. Pulsed Forward Current | - | - | 40 | A | |
| Vsd | Diode Forward Voltage | ID=11A | - | - | 1.8 | V |
| Trr | Reverse Recovery Time | IS=1 A,VGS =0V diF/dt=100A/s (Note3) | - | 303 | - | nS |
| Qrr | Reverse Recovery Charge | - | - | - | C | |
| Package Dimensions (TO-220F) | ||||||
| Symbol | Size | Unit | Min | Max | ||
| W | 9.96 | mm | 9.96 | 10.36 | ||
| W1 | 2.54 (TYP) | |||||
| W2 | 0.70 | mm | 0.70 | 0.90 | ||
| W3 | 1.24 | mm | 1.24 | 1.47 | ||
| W4 | 0.25 | mm | 0.25 | 0.45 | ||
| L | 15.67 | mm | 15.67 | 16.07 | ||
| L1 | 6.48 | mm | 6.48 | 6.88 | ||
| L2 | 3.20 | mm | 3.20 | 3.40 | ||
| L3 | 12.78 | mm | 12.78 | 13.18 | ||
| T | 4.50 | mm | 4.50 | 4.90 | ||
| T1 | 2.34 | mm | 2.34 | 2.74 | ||
| T2 | 2.56 | mm | 2.56 | 2.96 | ||
| T3 | 0.45 | mm | 0.45 | 0.60 | ||
| G() | 3.08 | mm | 3.08 | 3.28 | ||
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