Robust Power MOSFET Winsok Semicon WSK55N20 N Channel Device with Superior Electrical Characteristics
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The WSK55N20 is a high-performance N-Channel MOSFET featuring extreme cell density, offering excellent RDS(ON) and gate charge characteristics. It is ideally suited for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: Winsok
- Certifications: RoHS Compliant, Green Product
- Testing: 100% UIS + Rg Tested, 100% EAS Guaranteed
- Device Type: Lead Free and Green Devices Available
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
| Drain-Source Voltage | BVDSS | VGS=0V , ID=250A | 200 | V | ||
| Static Drain-Source On-Resistance | RDS ON | VGS=10V , ID=15A | 48 | 55 | m | |
| Gate Threshold Voltage | VGS th | VGS=VDS , ID=250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source Leakage Current | IDSS | VDS=200V , VGS=0V | 1.0 | A | ||
| Gate-Source Leakage Current | IGSS | VDS=0V , VGS=20V | 100 | nA | ||
| Forward Transconductance | gfs | VDS=40V , ID=15A | 24 | S | ||
| Gate Resistance | RG | =1.0MHz | 25 | |||
| Total Gate Charge | Qg | VDS=160V , VGS=10V , ID=28A | 105 | nC | ||
| Gate-Source Charge | Qgs | 16 | ||||
| Gate-Drain Charge | Qgd | 53 | ||||
| Turn-On Delay Time | Td on | VDS=100V , VGS=10V , RL=1 , RGEN=25 | 30 | ns | ||
| Rise Time | Tr | 263 | ||||
| Turn-Off Delay Time | Td off | 311 | ||||
| Fall Time | Tf | 222 | ||||
| Input Capacitance | Ciss | VDS=25V , VGS=0V , =1.0MHz | 2926 | pF | ||
| Output Capacitance | Coss | 371 | ||||
| Reverse Transfer Capacitance | Crss | 219 | ||||
| Continuous Source Current | IS | 55 | A | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A | 1.4 | V | ||
| Reverse Recovery Time | trr | IF=20A , di/dt=500A/s | 220 | ns | ||
| Reverse Recovery Charge | Qrr | 2.0 | nC | |||
| Continuous Drain Current | ID | TC=25C | 55 | A | ||
| Continuous Drain Current | ID | TC=100C | 45 | A | ||
| Pulse Drain Current | IDM | 200 | A | |||
| Power Dissipation | PD | TC=25C | 158 | W | ||
| Single pulse Avalanche Current | IAS | 30 | A | |||
| Single pulse Avalanche Energy | EAS | L=0.3mH | 800 | mJ | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Thermal Resistance-Junction to Ambient | RJA | t10s | 20 | C/W | ||
| Thermal Resistance-Junction to Ambient | RJA | Steady State | 62 | |||
| Thermal Resistance-Junction to Case | RJC | 1.3 | W |
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina