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Power Switching Transistor TOSHIBA 2SA1298-Y LF Silicon PNP Epitaxial Type with High DC Current Gain

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Price: Negotiable
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Product Description

Product Overview

The TOSHIBA 2SA1298 is a silicon PNP epitaxial transistor manufactured using the PCT process. It is designed for low frequency power amplifier and power switching applications. Key advantages include high DC current gain (hFE = 100 to 320), low saturation voltage (VCE (sat) = -0.4 V max), and suitability as a driver stage for small motors. It is complementary to the 2SC3265 and comes in a small package.

Product Attributes

  • Brand: TOSHIBA
  • Type: Silicon PNP Epitaxial Transistor
  • Package: JEDEC TO-236MOD / JEITA SC-59
  • Weight: 0.012 g (typ.)
  • Start of Commercial Production: 1982-10

Technical Specifications

CharacteristicsSymbolTest ConditionMinTyp.MaxUnit
Collector cut-off currentICBOVCB = -30 V, IE = 0---0.1µA
Emitter cut-off currentIEBOVEB = -50 V, IC = 0---0.1µA
Collector-emitter breakdown voltageV(BR)CEOIC = -10 mA, IB = 0-25--V
Emitter-base breakdown voltageV(BR)EBOIE = -0.1 mA, IC = 0-5--V
DC current gainhFE (1)VCE = -1 V, IC = -100 mA100-320-
hFE (2)VCE = -1 V, IC = -800 mA40---
Collector-emitter saturation voltageVCE (sat)IC = -500 mA, IB = -20 mA---0.4V
Base-emitter voltageVBEVCE = -1 V, IC = -10 mA-0.5--0.8V
Transition frequencyfTVCE = -5 V, IC = -10 mA-120-MHz
Collector output capacitanceCobVCB = -10 V, IE = 0, f = 1 MHz-13-pF

Absolute Maximum Ratings

CharacteristicsSymbolRatingUnit
Collector-base voltageVCBO-30V
Collector-emitter voltageVCEO-25V
Emitter-base voltageVEBO-5V
Collector currentIC-800mA
Base currentIB-160mA
Collector power dissipationPC200mW
Junction temperatureTj150°C
Storage temperature rangeTstg-55 to 150°C

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Company Hefei Purple Horn E-Commerce Co., Ltd.
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