Silicon Transistor TOSHIBA 2SC4213-B TE85L F with Low Cut Off Current and High Gain Characteristics
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Product Description
Product Overview
The TOSHIBA 2SC4213 is a silicon NPN epitaxial transistor designed for muting and switching applications. It features high emitter-base voltage (VEBO = 25 V min), high reverse hFE (150 typ.), low on resistance (1 typ.), and high DC current gain (200 to 1200). Its small package makes it suitable for various electronic designs.
Product Attributes
- Brand: TOSHIBA
- Origin: Japan (implied by TOSHIBA)
- Material: Silicon
- Package: SC-70 (JEITA/JEITA)
- Weight: 0.006 g (typ.)
- Start of Commercial Production: 1987-05
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Collector cut-off current | ICBO | VCB = 50 V, IE = 0 | - | - | 0.1 | A |
| Emitter cut-off current | IEBO | VEB = 25 V, IC = 0 | - | - | 0.1 | A |
| DC current gain | hFE (Note) | VCE = 2 V, IC = 4 mA | 200 | - | 1200 | - |
| Collector-emitter saturation voltage | VCE (sat) | IC = 30 mA, IB = 3 mA | - | 0.042 | 0.1 | V |
| Base-emitter voltage | VBE | VCE = 2 V, IC = 4 mA | - | 0.61 | - | V |
| Transition frequency | fT | VCE = 6 V, IC = 4 mA | - | 30 | - | MHz |
| Collector output capacitance | Cob | VCB = 10 V, IE = 0, f = 1 MHz | - | 4.8 | 7 | pF |
| Turn-on time | ton | - | - | 160 | - | ns |
| Storage time | tstg | - | - | 500 | - | ns |
| Fall time | tf | Duty cycle 2% | - | 130 | - | ns |
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | 50 | V |
| Collector-emitter voltage | VCEO | 20 | V |
| Emitter-base voltage | VEBO | 25 | V |
| Collector current | IC | 300 | mA |
| Base current | IB | 60 | mA |
| Collector power dissipation | PC | 100 | mW |
| Junction temperature | Tj | 125 | C |
| Storage temperature range | Tstg | -55 to 125 | C |
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