TO252 Package Silicon Carbide Diode Wolfspeed E4D02120E-TR 1200 Volt 2 Amp Suitable for PV Inverters
Product Overview
The E4D02120E is a 4th Generation 1200 V, 2 A Silicon Carbide (SiC) Schottky Diode from Wolfspeed. It offers significant performance advantages over silicon-based solutions, including higher efficiency, faster switching frequencies, and increased power density. This SiC diode features a low forward voltage (VF) drop with a positive temperature coefficient, zero reverse recovery current, and temperature-independent switching behavior. It is designed for applications requiring high reliability and performance, such as bootstrap diodes, boost diodes in PFC, automotive power conversion, PV inverters, and outdoor power conversion. The diode's ability to be easily paralleled without thermal runaway concerns, combined with reduced cooling requirements, contributes to lower overall system costs.
Product Attributes
- Brand: Wolfspeed
- Material: Silicon Carbide (SiC) Schottky
- Package Type: TO-252-2
- Certifications: AEC-Q101 + HV-H3TRB Qualified, PPAP Capable
- RoHS Compliance: Compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 1200 | V | ||
| DC Blocking Voltage | VDC | 1200 | V | ||
| Continuous Forward Current | IF | 8 | A | TJ = 25 C | Fig. 3 |
| Continuous Forward Current | IF | 4 | A | TJ = 135 C | Fig. 3 |
| Continuous Forward Current | IF | 2 | A | TJ = 160 C | Fig. 3 |
| Repetitive Peak Forward Surge Current | IFRM | 11 | A | Tc = 25 C, tp = 10 ms, Half Sine Wave | |
| Repetitive Peak Forward Surge Current | IFRM | 7 | A | Tc = 110 C, tp = 10 ms, Half Sine Wave | |
| Power Dissipation | Ptot | 50 | W | TC = 25 C | Fig. 4 |
| Power Dissipation | Ptot | 21 | W | TC = 110 C | Fig. 4 |
| Forward Voltage | VF | 1.4 (Typ.), 1.8 (Max.) | V | IF = 2 A, TJ = 25 C | Fig. 1 |
| Forward Voltage | VF | 1.9 | V | IF = 2 A, TJ = 175 C | |
| Reverse Current | IR | 10 (Typ.), 50 (Max.) | A | VR = 1200 V, TJ = 25 C | Fig. 2 |
| Reverse Current | IR | 40 | A | VR = 1200 V, TJ = 175 C | |
| Total Capacitive Charge | QC | 16 | nC | VR = 800 V, TJ = 25 C | Fig. 5 |
| Total Capacitance | C | 153 | pF | VR = 0 V, TJ = 25 C, f = 1 MHz | Fig. 6 |
| Total Capacitance | C | 17 | pF | VR = 400 V, TJ = 25 C, f = 1 MHz | Fig. 6 |
| Total Capacitance | C | 14 | pF | VR = 800 V, TJ = 25 C, f = 1 MHz | Fig. 6 |
| Capacitance Stored Energy | EC | 5.6 | J | VR = 800 V | Fig. 7 |
| Thermal Resistance, Junction to Case (Typ.) | R, JC | 2.99 | C / W | ||
| Operating Junction & Storage Temperature | TJ , Tstg | -55 to +175 | C | Fig. 8 | |
| Maximum Processing Temperature | TPROC | 325 (10 min.) | C | ||
| Maximum Moisture Sensitivity Level | MSL | 3 | |||
| Human Body Model (ESD) | HBM | Class 3B ( 8000 V) | |||
| Charge Device Model (ESD) | CDM | Class C3 ( 1000 V) |
Package Dimensions (TO-252-2):
- A: 2.159 - 2.413 mm
- A1: 0 - 0.13 mm
- b: 0.64 - 0.89 mm
- b2: 0.653 - 1.143 mm
- b3: 5.004 - 5.6 mm
- c: 0.457 - 0.61 mm
- c2: 0.457 - 0.864 mm
- D: 5.867 - 6.248 mm
- D1: 5.21 mm
- E: 6.35 - 7.341 mm
- E1: 4.32 mm
- e: 4.58 BSC
- H: 9.65 - 10.414 mm
- L: 1.106 - 1.78 mm
- L2: 0.51 BSC
- L3: 0.889 - 1.27 mm
- L4: 0.64 - 1.01 mm
- : 0 - 8
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.