Gallium Nitride RF Power Transistor Wolfspeed CGH40090PP for Broadband Microwave Applications
MACOM CGH40090PP RF Power GaN HEMT
Product Overview
The MACOM CGH40090PP is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications. Operating from a 28-volt rail, it offers high efficiency, high gain, and wide bandwidth capabilities, making it ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package.
Product Attributes
- Brand: MACOM Technology Solutions Inc.
- Material: Gallium Nitride (GaN)
- Package Type: 440199
Technical Specifications
| Parameter | Symbol | Rating | Units | Conditions |
|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 120 | Volts | 25 C |
| Gate-to-Source Voltage | VGS | -10, +2 | Volts | 25 C |
| Storage Temperature | TSTG | -65, +150 | C | |
| Operating Junction Temperature | TJ | 225 | C | |
| Maximum Forward Gate Current | IGMAX | 28 | mA | 25 C |
| Maximum Drain Current | IDMAX | 12 | A | 25 C |
| Soldering Temperature | TS | 245 | C | |
| Screw Torque | 40 | in-oz | ||
| Thermal Resistance, Junction to Case | RJC | 1.45 | C/W | 85 C Case |
| Case Operating Temperature | TC | -40, +85 | C | |
| Gate Threshold Voltage | VGS(th) | -3.8, -3.0, -2.3 | VDC | VDS = 10 V, ID = 28.8 mA |
| Gate Quiescent Voltage | VGS(Q) | -2.7 | VDC | VDS = 28 V, ID = 1.0 A |
| Saturated Drain Current | IDS | 20.2, 28.2 | A | VDS = 6.0 V, VGS = 2.0 V |
| Drain-Source Breakdown Voltage | VBR | 84 | VDC | VGS = -8 V, ID = 28.8 mA |
| Small Signal Gain | GSS | 12, 12.5 | dB | VDD = 28 V, IDQ = 1.0 A |
| Power Output | PSAT | 80, 100 | W | VDD = 28 V, IDQ = 1.0 A |
| Drain Efficiency | 45, 55 | % | VDD = 28 V, IDQ = 1.0 A, POUT = PSAT | |
| Output Mismatch Stress VSWR | 10 : 1 | No Damage at All Phase Angles, VDD = 28 V, IDQ = 1.0 A, POUT = 90 W CW | ||
| Input Capacitance | CGS | 19.0 | pF | VDS = 28 V, VGS = -8 V, f = 1 MHz |
| Output Capacitance | CDS | 5.9 | pF | VDS = 28 V, VGS = -8 V, f = 1 MHz |
| Feedback Capacitance | CGD | 0.8 | pF | VDS = 28 V, VGS = -8 V, f = 1 MHz |
Note: Capacitance values are for each side of the device.
ESD Classifications
| Parameter | Symbol | Class | Test Methodology |
|---|---|---|---|
| Human Body Model | HBM | 1 A | > 250 V JEDEC JESD22 A114-D |
| Charge Device Model | CDM | 1 | < 200 V JEDEC JESD22 C101-C |
Product Ordering Information
| Order Number | Description | Unit of Measure |
|---|---|---|
| CGH40090PP | GaN HEMT | Each |
| CGH40090PP-AMP | Test Board with GaN HEMT Installed | Each |
MACOM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support
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