TOSHIBA TTA006B Q PNP Bipolar Transistor Featuring Low Output Capacitance for Amplifier Applications

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Product Description

Product Overview

The TTA006B is a silicon PNP epitaxial bipolar transistor designed for power amplifier and audio-frequency amplifier applications. It features a high collector voltage of -230 V (min), small collector output capacitance (30 pF typ.), and a high transition frequency (70 MHz typ.). It is complementary to the TTC011B.

Product Attributes

Brand: Toshiba
Material: Silicon
Type: PNP Epitaxial Bipolar Transistor
Certifications: RoHS Compatible

Technical Specifications

Characteristics	Symbol	Test Condition	Min	Typ.	Max	Unit
Absolute Maximum Ratings
Collector-base voltage	VCBO				-230	V
Collector-emitter voltage	VCEO				-230	V
Emitter-base voltage	VEBO				-5	V
Collector current (DC)	IC	(Tc = 25 ℃)			-1	A
Collector current (pulsed)	ICP	(Tc = 25 ℃)			-2	A
Base current	IB				-0.5	A
Collector power dissipation	PC	(Note 1)			1.5	W
Collector power dissipation	PC	(Note 1)			10	W
Junction temperature	Tj				150	℃
Storage temperature	Tstg		-55	to	150	℃
Electrical Characteristics (Static)
Collector cut-off current	ICBO	VCB = -230 V, IE = 0 A			-200	nA
Emitter cut-off current	IEBO	VEB = -5 V, IC = 0 A			-100	nA
Collector-emitter breakdown voltage	V(BR)CEO	IC = -10 mA, IB = 0 A	-230			V
DC current gain	hFE	VCE = -5 V, IC = -0.1 A	100		320
Collector-emitter saturation voltage	VCE(sat)	IC = -0.5 A, IB = -50 mA			-1.5	V
Base-emitter voltage	VBE	VCE = -5 V, IC = -0.5 A			-1.0	V
Electrical Characteristics (Dynamic)
Collector output capacitance	Cob	VCB = -10 V, IE = 0 A, f = 1 MHz		30		pF
Transition frequency	fT	VCE = -10 V, IC = -0.1 A		70		MHz