High Gain Gallium Nitride Transistor Wolfspeed CGH09120F Supporting Digital Pre Distortion Correction
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Product Description
Product Overview
The MACOM CGH09120F is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for high efficiency, high gain, and wide bandwidth applications. It is ideal for amplifier applications in MC-GSM, WCDMA, and LTE systems. The transistor features UHF to 2.5 GHz operation, 21 dB gain, and -38 dBc ACLR at 20 W PAVE, with 35% efficiency at 20 W PAVE. It is supplied in a ceramic/metal flange package and supports a high degree of Digital Pre-Distortion (DPD) correction. Large signal models are available for ADS and MWO.
Product Attributes
- Brand: MACOM Technology Solutions Inc.
- Package Type: 440095
- Material: Gallium Nitride (GaN)
- Construction: Ceramic/metal flange package
Technical Specifications
| Parameter | Symbol | Rating | Units | Conditions |
|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 120 | V | 25C |
| Gate-to-Source Voltage | VGS | -10, +2 | V | |
| Power Dissipation | PDISS | 56 | W | |
| Storage Temperature | TSTG | -65, +150 | C | |
| Operating Junction Temperature | TJ | 225 | C | |
| Maximum Forward Gate Current | IGMAX | 30 | mA | 25C |
| Maximum Drain Current | IDMAX | 12 | A | Current limit for long term, reliable operation |
| Soldering Temperature | TS | 245 | C | |
| Screw Torque | 40 | in-oz | ||
| Thermal Resistance, Junction to Case | RJC | 1.7 | C/W | |
| Case Operating Temperature | TC | -40, +150 | C | |
| Gate Threshold Voltage | VGS(th) | -3.8, -3.0, -2.3 | VDC | VDS = 10 V, ID = 28.8 mA |
| Gate Quiescent Voltage | VGS(Q) | -2.7 | V | VDs = 28, ID = 1.2 A |
| Saturated Drain Current | IDS | 23.2, 28.0 | A | VDS = 6.0 V, VGS = 2.0 V |
| Drain-Source Breakdown Voltage | VBR | 84 | VDC | VGS = -8 V, ID = 28.8 mA |
| Saturated Output Power | PSAT | 120 | W | VDD = 28 V, IDQ = 1.2 A |
| Pulsed Drain Efficiency | 75 | % | VDD = 28 V, IDQ = 1.2 A, POUT = PSAT | |
| Modulated Gain | GSS | 20, 21.5 | dB | VDD = 28 V, IDQ = 1.2 A, POUT = 43 dBm |
| WCDMA Linearity | ACLR | -38, -34 | dBc | |
| Modulated Drain Efficiency | 31, 35 | % | ||
| Output Mismatch Stress | VSWR | 10 : 1 | No damage at all phase angles, VDD = 28 V, IDQ = 1.2 A, POUT = 20 W CW | |
| Input Capacitance | CGS | 35.3 | pF | VDS = 28 V, VGS = -8 V, = 1 MHz |
| Output Capacitance | CDS | 9.1 | pF | |
| Feedback Capacitance | CGD | 1.6 | pF | |
| Frequency Range | UHF - 2.5 GHz | |||
| Gain | 21 | dB | ||
| ACLR @ 20 W PAVE | -38 | dBc | ||
| Efficiency @ 20 W PAVE | 35 | % |
Electrostatic Discharge (ESD) Classifications:
| Parameter | Symbol | Class | Classification Level | Test Methodology |
|---|---|---|---|---|
| Human Body Model | HBM | 1A | ANSI/ESDA/JEDEC JS-001 Table 3 | |
| Charge Device Model | CDM | C3 | ANSI/ESDA/JEDEC JS-002 Table 3 |
Product Ordering Information:
| Order Number | Description | Unit of Measure |
|---|---|---|
| CGH09120F | GaN HEMT | Each |
| CGH09120F-AMP | Test board with GaN HEMT installed | Each |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina