Silicon NPN Epitaxial Bipolar Transistor TOSHIBA TTC004B Q for Audio Frequency Amplifier Applications
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Product Description
Product Overview
The TTC004B is a silicon NPN epitaxial bipolar transistor designed for audio-frequency amplifiers. It features a high collector voltage (VCEO = 160 V min), complementary to the TTA004B, low collector output capacitance (Cob = 12 pF typ.), and a high transition frequency (fT = 100 MHz typ.).
Product Attributes
- Brand: Toshiba
- Material: Silicon
- Type: NPN Epitaxial Bipolar Transistor
- Certifications: RoHS Compatible
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Static Characteristics | ||||||
| Collector cut-off current | ICBO | VCB = 160 V, IE = 0 A | 100 | nA | ||
| Emitter cut-off current | IEBO | VEB = 6 V, IC = 0 A | 100 | nA | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = 10 mA, IB = 0 A | 160 | V | ||
| DC current gain | hFE(1) | VCE = 5 V, IC = 1 mA | 80 | |||
| DC current gain | hFE(2) | VCE = 5 V, IC = 0.1 A | 140 | 280 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC = 0.5 A, IB = 50 mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC = 0.5 A, IB = 50 mA | 1.3 | V | ||
| Dynamic Characteristics | ||||||
| Collector output capacitance | Cob | VCB = 10 V, IC = 0 A, f = 1 MHz | 12 | pF | ||
| Transition frequency | fT | VCE = 10 V, IC = 100 mA | 100 | MHz | ||
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | 160 | V |
| Collector-emitter voltage | VCEO | 160 | V |
| Emitter-base voltage | VEBO | 6 | V |
| Collector current (DC) | IC | 1.5 | A |
| Collector current (pulsed) | ICP | 2.5 | A |
| Base current | IB | 0.5 | A |
| Collector power dissipation (Tc = 25 ℃) | PC | 10 | W |
| Collector power dissipation (Ta = 25 ℃) | PC | 1.5 | W |
| Junction temperature | Tj | 150 | ℃ |
| Storage temperature | Tstg | -55 to 150 | ℃ |
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