Silicon Carbide Half Bridge Module Wolfspeed WAS310M17BM3 1700 Volt 310 Amp High Frequency Operation
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Product Description
Product Overview
The Wolfspeed WAS310M17BM3 is a 1700 V, 310 A Silicon Carbide Half-Bridge Module designed for high-frequency, ultra-low loss operation. It features an industry-standard 62 mm footprint, enabling system retrofits, and offers high humidity operation (THB-80). Key benefits include increased system efficiency due to the low switching and conduction losses of SiC technology, zero reverse recovery from diodes, zero turn-off tail current from MOSFETs, and normally-off, fail-safe device operation. Typical applications include induction heating, motor drives, renewables, railway auxiliary & traction, EV fast charging, and UPS and SMPS.
Product Attributes
- Brand: Wolfspeed
- Technology: Silicon Carbide (SiC)
- Footprint: 62 mm
- Operation: High Humidity (THB-80)
- Device Operation: Normally-off, Fail-safe
- Baseplate Material: Copper
- Insulator Material: Aluminum Nitride
- Certifications: RoHS Compliant, REACh Compliant
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions | Note |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 1700 | V | ||||
| DC Continuous Drain Current | ID | 409 | A | VGS = 15 V, TC = 25 C, TVJ 175 C | Notes 2, 3 | ||
| DC Source-Drain Current (Schottky Diode) | ISD(SD) | 482 | A | VGS = -4 V, TC = 25 C, TVJ 175 C | |||
| Pulsed Drain-Source Current | IDM | 620 | A | VGS = 15 V, TC = 25 C, tPmax limited by TVJmax | |||
| Power Dissipation | PD | 1630 | W | TC = 25 C, TVJ 175 C | Note 4 | ||
| Virtual Junction Temperature (Operation) | TVJ(op) | -40 | 150 | C | Operation | ||
| Virtual Junction Temperature (Intermittent) | TVJ | 175 | C | Intermittent with Reduced Life | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 1700 | V | VGS = 0 V, TVJ = -40 C | |||
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.5 | 3.6 | V | VDS = VGS, ID = 102 mA | |
| Zero Gate Voltage Drain Current | IDSS | 26.4 | 2560 | A | VGS = 0 V, VDS = 1700 V | ||
| Gate-Source Leakage Current | IGSS | 4 | 1000 | nA | VGS = 15 V, VDS = 0 V | ||
| Drain-Source On-State Resistance | RDS(on) | 4.3 | 5.8 | m | VGS = 15 V, ID = 310 A | ||
| Transconductance | gfs | 290 | S | VDS = 20 V, ID = 310 A | |||
| Turn-On Switching Energy | EOn | 4.4 | mJ | TVJ = 25 C, VDD = 900 V, ID = 310 A, VGS = -4 V/15 V, RG(OFF) = 1.0 , RG(ON) = 1.0 , L = 13.6 H | |||
| Turn-Off Switching Energy | EOff | 7.2 | mJ | TVJ = 25 C, VDD = 900 V, ID = 310 A, VGS = -4 V/15 V, RG(OFF) = 1.0 , RG(ON) = 1.0 , L = 13.6 H | |||
| Input Capacitance | Ciss | 31.5 | nF | VGS = 0 V, VDS = 1000 V, VAC = 25 mV, f = 100 kHz | |||
| Output Capacitance | Coss | 1.8 | nF | ||||
| Reverse Transfer Capacitance | Crss | 45 | pF | ||||
| Total Gate Charge | QG | 996 | nC | VDS = 1200 V, VGS = -4 V/15 V, ID = 310 A, Per IEC60747-8-4 pg 21 | |||
| FET Thermal Resistance, Junction to Case | Rth JC | 0.092 | C/W | Fig. 17 | |||
| Diode Forward Voltage | VF | 1.78 | V | VGS = -4 V, IF = 310 A, TVJ = 25 C | Fig. 7 | ||
| Reverse Recovery Time | trr | 27 | ns | VGS = -4 V, ISD = 310 A, VR = 900 V, di/dt = 26.5 A/ns, TVJ = 150 C | Fig. 32 | ||
| Reverse Recovery Charge | Qrr | 4.5 | C | ||||
| Peak Reverse Recovery Current | Irrm | 281 | A | ||||
| Reverse Recovery Energy | Err | 3.5 | mJ | TVJ = 25 C, VDS = 900 V, ID = 310 A, VGS = -4 V/15 V, RG(ext) = 1.0 , L = 13.6 H | Note 5 | ||
| Diode Thermal Resistance, Junction to Case | Rth JC | 0.086 | C/W | Fig. 18 | |||
| Package Resistance, M1 (High-Side) | R3-1 | 1.31 | m | TC = 25 C, ISD = 310 A | Note 6 | ||
| Package Resistance, M2 (Low-Side) | R1-2 | 1.26 | m | TC = 25 C, ISD = 310 A | Note 6 | ||
| Stray Inductance | LStray | 11.1 | nH | Between DC- and DC+, f = 10 MHz | |||
| Case Temperature | TC | -40 | 125 | C | |||
| Mounting Torque | MS | 4 | 5 | 5.5 | N-m | Baseplate, M6-1.0 Bolts; Power Terminals, M6-1.0 Bolts | |
| Weight | W | 300 | g | ||||
| Case Isolation Voltage | Visol | 5 | kV AC, 50 Hz, 1 minute | ||||
| Clearance Distance (Terminal to Terminal) | 9 | mm | |||||
| Clearance Distance (Terminal to Baseplate) | 30 | mm | |||||
| Creepage Distance (Terminal to Terminal) | 30 | mm | |||||
| Creepage Distance (Terminal to Baseplate) | 40 | mm |
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