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1200V 10A Trench Field Stop IGBT SPTECH SPT10N120T1 with low saturation voltage and high ruggedness

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Product Description

Product Overview

The SPT10N120T1 is a 1200V / 10A Trench Field Stop IGBT designed for high reliability and robust performance. It features Trench-Stop Technology for very tight parameter distribution, high ruggedness, and stable temperature behavior. Key advantages include a short circuit withstand time of 10s, low VCE(SAT), and easy parallel switching capability due to a positive temperature coefficient in VCE(SAT). The device also offers enhanced avalanche capability.

Product Attributes

  • Brand: Superic
  • Product Package: TO247
  • Packaging: Tube

Technical Specifications

ParameterSymbolConditionsMinTypMaxUnit
IGBT Electrical Characteristics
Collector-Emitter Breakdown VoltageBVCESVGE=0V , IC=250A1200--V
Gate threshold voltageVGE(th)VGE=VCE, IC=250A5.25.86.8V
Collector-Emitter Saturation voltageVCE(sat)VGE=15V, IC=10A, Tj = 25C-1.60-V
Collector-Emitter Saturation voltageVCE(sat)VGE=15V, IC=10A, Tj = 150C--1.95V
Zero gate voltage collector currentICESVCE = 1200V, VGE = 0V, Tj = 25C--100A
Zero gate voltage collector currentICESVCE = 1200V, VGE = 0V, Tj = 150C--1000A
Gate-emitter leakage currentIGESVCE = 0V, VGE = 20V--100nA
TransconductancegfsVCE = 20V, IC = 10A-10-S
IGBT Dynamic Characteristics
Input capacitanceCiesVCE = 25V, VGE = 0V, f = 1MHz-1510-pF
Output capacitanceCoesVCE = 25V, VGE = 0V, f = 1MHz-50-pF
Reverse transfer capacitanceCresVCE = 25V, VGE = 0V, f = 1MHz-18-pF
Gate chargeQGVCC = 960V, IC = 15A, VGE = 15V-84-nC
IGBT Switching Characteristics
Turn-on delay Timetd(on)VCC = 600V, IC = 10A, VGE = 0/15V, Rg=12, Tj = 25C-22-ns
Rise TimetrVCC = 600V, IC = 10A, VGE = 0/15V, Rg=12, Tj = 25C-15-ns
Turn-off delay timetd(off)VCC = 600V, IC = 10A, VGE = 0/15V, Rg=12, Tj = 25C-70-ns
Fall timetfVCC = 600V, IC = 10A, VGE = 0/15V, Rg=12, Tj = 25C-77-ns
Turn-on EnergyEonVCC = 600V, IC = 10A, VGE = 0/15V, Rg=12, Tj = 25C-1.20-mJ
Turn-off energyEoffVCC = 600V, IC = 10A, VGE = 0/15V, Rg=12, Tj = 25C-0.17-mJ
DIODE Electrical Characteristics
Diode Forward VoltageVFMIF = 10A, Tj = 25C-2.3-V
Reverse Recovery TimeTrrIF= 15A, di/dt= 600A/s, Tj = 25C-270-ns
Reverse Recovery CurrentIrrIF= 15A, di/dt= 600A/s, Tj = 25C-10-A
Reverse Recovery ChargeQrrIF= 15A, di/dt= 600A/s, Tj = 25C-1800-nC
Maximum Ratings
Collector-Emitter Breakdown VoltageVCE---1200V
DC collector current, limited by TjmaxICTC = 25C--20A
DC collector current, limited by TjmaxICTC = 100C--10A
Diode Forward current, limited by TjmaxIFTC = 25C--20A
Diode Forward current, limited by TjmaxIFTC = 100C--10A
Continuous Gate-emitter voltageVGE---20V
Transient Gate-emitter voltageVGE---30V
Pulsed collector current, VGE= 15V, tp limited by TjmaxICM---40A
Short Circuit Withstand Time, VGE= 15V, VCE 600VTsc---10s
Power dissipation , Tj=25CPtot---260W
Operating junction temperatureTj--40-150C
Storage temperatureTs--55-150C
Soldering temperature, wave soldering 1.6mm from case for 10s----260C
Thermal Resistance
IGBT thermal resistance, junction - caseR(j-c)---0.69K/W
Diode thermal resistance, junction - caseR(j-c)---1.5K/W
Thermal resistance, junction - ambientR(j-a)---40K/W

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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