Wolfspeed CAS175M12BM3 175 Amp Silicon Carbide Module with Industry Standard 62 Millimeter Footprint
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Product Description
Product Overview
The CAS175M12BM3 is a 1200 V, 175 A Silicon Carbide Half-Bridge Module designed for high-frequency operation with ultra-low losses. It features zero reverse recovery from diodes and zero turn-off tail current from MOSFETs, offering normally-off, fail-safe device operation. The module utilizes a copper baseplate and aluminum nitride insulator, and its industry-standard 62 mm footprint enables system retrofitting. Key applications include induction heating, motor drives, renewables, railway auxiliary & traction, EV fast charging, and UPS and SMPS systems. The 62 mm form factor enhances system efficiency by leveraging the low switching and conduction losses of Silicon Carbide technology.
Product Attributes
- Brand: Wolfspeed
- Model: CAS175M12BM3
- Technology: Silicon Carbide (SiC)
- Package Type: 62 mm Half-Bridge Module
- Certifications: RoHS Compliant, REACh Compliant
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions | Note |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 1200 | V | ||||
| Gate-Source Voltage, Maximum Value | VGS(max) | -8 | +19 | V | Transient | Note 1 Fig. 33 | |
| Gate-Source Voltage, Recommended | VGS(op) | -4 | +15 | V | Static DC Continuous | ||
| DC Continuous Drain Current | ID | 176 | 234 | A | VGS = 15 V, TC = 25 C, TVJ 175 C | Notes 2, 3 Fig. 21 | |
| DC Continuous Drain Current | ID | 176 | A | VGS = 15 V, TC = 90 C, TVJ 175 C | |||
| DC Source-Drain Current (Schottky Diode) | ISD(SD) | 236 | A | VGS = -4 V, TC = 25 C, TVJ 175 C | |||
| Pulsed Drain-Source Current | IDM | 350 | A | tPmax limited by TVJmax, VGS = 15 V, TC = 25 C | |||
| Power Dissipation | PD | 789 | W | TC = 25 C, TVJ 175 C | Note 4 Fig. 21 | ||
| Virtual Junction Temperature | TVJ(op) | -40 | 150 | C | Operation | ||
| Virtual Junction Temperature | TVJ(op) | 175 | C | Intermittent with Reduced Life | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 1200 | V | VGS = 0 V, TVJ = -40 C | |||
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.5 | 3.6 | V | VDS = VGS, ID = 43 mA | |
| Zero Gate Voltage Drain Current | IDSS | 4.1 | 564 | A | VGS = 0 V, VDS = 1200 V | ||
| Gate-Source Leakage Current | IGSS | 20 | 200 | nA | VGS = 15 V, VDS = 0 V | ||
| Drain-Source On-State Resistance | RDS(on) | 8.0 | 10.4 | m | VGS = 15 V, ID = 175 A | Fig. 2 Fig. 3 | |
| Drain-Source On-State Resistance | RDS(on) | 12.9 | m | VGS = 15 V, ID = 175 A, TVJ = 150 C | |||
| Drain-Source On-State Resistance | RDS(on) | 14.4 | m | VGS = 15 V, ID = 175 A, TVJ = 175 C | |||
| Transconductance | gfs | 156 | S | VDS = 20 V, ID = 175 A | Fig. 4 | ||
| Turn-On Switching Energy | EON | 2.4 | 2.7 | mJ | TVJ = 25 C, VDD = 600 V, ID = 175 A, VGS = -4 V/15 V, RG(OFF) = 0.0 , RG(ON) = 0.0 , L = 42 H | Fig. 11 Fig. 13 | |
| Turn-Off Switching Energy | EOFF | 1.9 | 2.0 | mJ | TVJ = 25 C, VDD = 600 V, ID = 175 A, VGS = -4 V/15 V, RG(OFF) = 0.0 , RG(ON) = 0.0 , L = 42 H | Fig. 11 Fig. 13 | |
| Internal Gate Resistance | RG(int) | 5.05 | f = 100 kHz | ||||
| Input Capacitance | Ciss | 12.9 | nF | VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz | Fig. 9 | ||
| Output Capacitance | Coss | 942 | pF | VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz | Fig. 9 | ||
| Reverse Transfer Capacitance | Crss | 26.4 | pF | VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz | Fig. 9 | ||
| Gate to Source Charge | QGS | 134 | nC | VDS = 800 V, VGS = -4 V/15 V, ID = 175 A, Per IEC60747-8-4 pg 21 | |||
| Gate to Drain Charge | QGD | 122 | nC | VDS = 800 V, VGS = -4 V/15 V, ID = 175 A, Per IEC60747-8-4 pg 21 | |||
| Total Gate Charge | QG | 422 | nC | VDS = 800 V, VGS = -4 V/15 V, ID = 175 A, Per IEC60747-8-4 pg 21 | |||
| FET Thermal Resistance, Junction to Case | Rth JC | 0.190 | C/W | Fig. 17 | |||
| Diode Thermal Resistance, JCT. to Case | Rth JC | 0.216 | C/W | Fig. 18 | |||
| Package Resistance, M1 (High-Side) | R3-1 | 2.30 | 3.22 | m | TC = 25 C, ISD = 175 A, Note 6 | ||
| Package Resistance, M2 (Low-Side) | R1-2 | 2.12 | 2.97 | m | TC = 25 C, ISD = 175 A, Note 6 | ||
| Stray Inductance | LStray | 11.1 | nH | Between DC- and DC+, f = 10 MHz | |||
| Case Temperature | TC | -40 | 125 | C | |||
| Mounting Torque | MS | 4 | 5 | 5.5 | N-m | Baseplate, M6-1.0 Bolts | |
| Mounting Torque | MS | 4 | 5 | 5.5 | N-m | Power Terminals, M6-1.0 Bolts | |
| Weight | W | 300 | g | ||||
| Case Isolation Voltage | Visol | 5 | kV AC, 50 Hz, 1 Minute | ||||
| Clearance Distance, Terminal to Terminal | 9 | mm | |||||
| Clearance Distance, Terminal to Baseplate | 30 | mm | |||||
| Creepage Distance, Terminal to Terminal | 30 | mm | |||||
| Creepage Distance, Terminal to Baseplate | 40 | mm |
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