1200 Volt 175 Amp Wolfspeed WAS175M12BM3 Silicon Carbide Module with Normally Off Fail Safe Operation
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The Wolfspeed WAS175M12BM3 is a 1200 V, 175 A Silicon Carbide Half-Bridge Module designed for high-frequency operation with ultra-low losses. It features zero reverse recovery from diodes and zero turn-off tail current from the MOSFET, offering normally-off, fail-safe device operation. The module boasts an industry-standard 62mm footprint, facilitating system retrofits and enabling increased system efficiency due to the low switching and conduction losses of SiC. It is suitable for demanding applications such as induction heating, motor drives, renewables, railway auxiliary & traction, EV fast charging, and UPS and SMPS.
Product Attributes
- Brand: Wolfspeed
- Technology: Silicon Carbide (SiC)
- Footprint: Industry Standard 62mm
- Device Operation: Normally-off, Fail-safe
- Construction: Copper Baseplate and Aluminum Nitride Insulator
- High Humidity Operation: THB-80 (HV-H3TRB)
- Certifications: RoHS Compliant, REACh Compliant
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions / Notes |
|---|---|---|---|---|---|---|
| Module Ratings | ||||||
| Drain-Source Voltage | VDS | 1200 | V | |||
| Drain Current | IDS | 175 | A | VGS = 15 V, TC = 90 C, TVJ 175 C | ||
| DC Source-Drain Current (Diode) | ISD | 169 | A | VGS = -4 V, TC = 90 C, TVJ 175 C | ||
| Virtual Junction Temperature | TVJ op | -40 | 150 | C | Operation | |
| Virtual Junction Temperature | TVJ op | 175 | C | Intermittent with Reduced Life | ||
| MOSFET Characteristics (Per Position) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | 1200 | V | VGS = 0 V, TVJ = -40 C | ||
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.5 | 3.6 | V | VDS = VGS, ID = 43 mA |
| Gate Threshold Voltage | VGS(th) | 2.0 | V | VDS = VGS, ID = 43 mA, TVJ = 175 C | ||
| Drain-Source On-State Resistance | RDS(on) | 8.0 | 10.4 | m | VGS = 15 V, ID = 175 A | |
| Drain-Source On-State Resistance | RDS(on) | 12.9 | m | VGS = 15 V, ID = 175 A, TVJ = 150 C | ||
| Turn-On Switching Energy | EOn | 2.4 | 2.7 | mJ | TVJ = 25 C to 150 C | |
| Turn-Off Switching Energy | EOff | 1.9 | 2.0 | mJ | TVJ = 25 C to 150 C | |
| Input Capacitance | Ciss | 12.9 | nF | VGS = 0 V, VDS = 800 V, f = 100 kHz | ||
| FET Thermal Resistance, Junction to Case | Rth JC | 0.190 | C/W | |||
| Diode Characteristics (Per Position) | ||||||
| Diode Forward Voltage | VF | 1.8 | V | VGS = -4 V, IF = 175 A, TVJ = 25 C | ||
| Diode Forward Voltage | VF | 2.3 | V | VGS = -4 V, IF = 175 A, TVJ = 150 C | ||
| Reverse Recovery Time | trr | 20.8 | ns | TVJ = 150 C | ||
| Reverse Recovery Charge | Qrr | 1.8 | C | |||
| Diode Thermal Resistance, JCT. to Case | Rth JC | 0.216 | C/W | |||
| Module Physical Characteristics | ||||||
| Package Resistance, M1 (High-Side) | R3-1 | 2.30 | 3.22 | m | TC = 25 C to 125 C | |
| Package Resistance, M2 (Low-Side) | R1-2 | 2.12 | 2.97 | m | TC = 25 C to 125 C | |
| Stray Inductance | LStray | 11.1 | nH | Between DC- and DC+, f = 10 MHz | ||
| Case Temperature | TC | -40 | 125 | C | ||
| Mounting Torque | MS | 4 | 5 | 5.5 | N-m | Baseplate & Power Terminals |
| Weight | W | 300 | g | |||
| Case Isolation Voltage | Visol | 5 | kV | AC, 50 Hz, 1 minute | ||
| Clearance Distance | 9 | 30 | mm | Terminal to Terminal / Baseplate | ||
| Creepage Distance | 30 | 40 | mm | Terminal to Terminal / Baseplate | ||
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