TOSHIBA RN4984 LF CT Silicon NPN PNP Bipolar Transistor for Driver and Interface Circuit Applications
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Product Description
Product Overview
The RN4984 is a silicon NPN/PNP epitaxial bipolar transistor featuring built-in bias resistors. This integrated design reduces the need for external components, leading to smaller system sizes and simplified assembly. It is suitable for switching, inverter circuits, interfacing, and driver circuit applications.
Product Attributes
- Brand: Toshiba
- Certifications: AEC-Q101 qualified
Technical Specifications
| Type | Characteristics | Symbol | Rating | Unit | Test Condition |
| Q1 Absolute Maximum Ratings | Collector-base voltage | VCBO | 50 | V | |
| Collector-emitter voltage | VCEO | 50 | V | ||
| Emitter-base voltage | VEBO | 10 | V | ||
| Collector current | IC | 100 | mA | ||
| Q2 Absolute Maximum Ratings | Collector-base voltage | VCBO | -50 | V | |
| Collector-emitter voltage | VCEO | -50 | V | ||
| Emitter-base voltage | VEBO | -10 | V | ||
| Collector current | IC | -100 | mA | ||
| Q1, Q2 Common Absolute Maximum Ratings | Collector power dissipation | PC | 200 | mW | |
| Junction temperature | Tj | 150 | |||
| Storage temperature | Tstg | -55 to 150 | |||
| Q1 Electrical Characteristics | Collector cut-off current | ICBO | 100 | nA | VCB = 50 V, IE = 0 mA |
| Collector cut-off current | ICEO | 500 | nA | VCE = 50 V, IB = 0 mA | |
| Emitter cut-off current | IEBO | 0.15 | mA | VEB = 10 V, IC = 0 mA | |
| DC current gain | hFE | 80 to 250 | VCE = 5 V, IC = 10 mA | ||
| Collector-emitter saturation voltage | VCE(sat) | 1.5 | V | IC = 5 mA, IB = 0.25 mA | |
| Input voltage (ON) | VI(ON) | 1.0 | V | VCE = 0.2 V, IC = 5 mA | |
| Input voltage (off) | VI(off) | 5.0 | V | VCE = 5 V, IC = 0.1 mA | |
| Transition frequency | fT | 150 | MHz | VCE = 10 V, IC = 5 mA | |
| Collector output capacitance | Cob | 6 | pF | VCB = 10 V, IE = 0 mA, f = 1 MHz | |
| Q2 Electrical Characteristics | Collector cut-off current | ICBO | -100 | nA | VCB = -50 V, IE = 0 mA |
| Collector cut-off current | ICEO | -500 | nA | VCE = -50 V, IB = 0 mA | |
| Emitter cut-off current | IEBO | -0.15 | mA | VEB = -10 V, IC = 0 mA | |
| DC current gain | hFE | -80 to -200 | VCE = -5 V, IC = -10 mA | ||
| Collector-emitter saturation voltage | VCE(sat) | -1.5 | V | IC = -5 mA, IB = -0.25 mA | |
| Input voltage (ON) | VI(ON) | -1.0 | V | VCE = -0.2 V, IC = -5 mA | |
| Input voltage (off) | VI(off) | -5.0 | V | VCE = -5 V, IC = -0.1 mA | |
| Transition frequency | fT | 150 | MHz | VCE = -10 V, IC = -5 mA | |
| Collector output capacitance | Cob | 6 | pF | VCB = -10 V, IE = 0 mA, f = 1 MHz | |
| Q1, Q2 Common Electrical Characteristics | Input resistance | R1 | 32.9 to 61.1 | k | |
| Resistor ratio | R1/R2 | 0.9 to 1.1 |
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Sellina