High Current Capability Silicon NPN Transistor TOSHIBA RN1425TE85LF for Switching and Driver Circuit

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Product Description

Product Overview

The Toshiba RN1421 to RN1427 series are NPN epitaxial silicon transistors featuring built-in bias resistors. These transistors are designed for switching, inverter, interface, and driver circuit applications. Key advantages include high current capability (up to 800 mA), simplified circuit design, reduced component count, and lower VCE(sat). They are complementary to the RN2421 to RN2427 series.

Product Attributes

Brand: TOSHIBA
Type: Silicon NPN Epitaxial Type (PCT Process)
Package: S-Mini (JEDEC TO-236MOD / JEITA SC-59)
Weight: 12 mg (typ.)
Start of Commercial Production: 1988-03

Technical Specifications

Type No.	R1 (k)	R2 (k)	VCBO (V)	VCEO (V)	VEBO (V)	IC (max) (mA)	PC (mW)	Tj (C)	Tstg (C)	ICBO (max) (nA)	ICEO (max) (mA)	hFE (VCE=1V, IC=100mA)	VCE(sat) (V)	fT (MHz)	Cob (pF)
RN1421	1	1	50	50	10	800	200	150	-55 to 150	100	500	60	0.25 (IC=50mA, IB=2mA)	300	7
RN1422	2.2	2.2	50	50	10	800	200	150	-55 to 150	100	500	65	0.25 (IC=50mA, IB=1mA)	300	7
RN1423	4.7	4.7	50	50	10	800	200	150	-55 to 150	100	500	70	0.25 (IC=50mA, IB=1mA)	300	7
RN1424	10	10	50	50	10	800	200	150	-55 to 150	100	500	90	0.25 (IC=50mA, IB=1mA)	300	7
RN1425	0.47	10	50	50	5	800	200	150	-55 to 150	100	500	90	0.25 (IC=50mA, IB=1mA)	300	7
RN1426	1	10	50	50	5	800	200	150	-55 to 150	100	500	90	0.25 (IC=50mA, IB=1mA)	300	7
RN1427	2.2	10	50	50	6	800	200	150	-55 to 150	100	500	90	0.25 (IC=50mA, IB=1mA)	300	7