Synchronous buck converter MOSFET featuring XCH XCH80N03 with low RDS ON and high cell density trench
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The XCH80N03 is a high cell density trench N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval, providing excellent CdV/dt effect decline.
Product Attributes
- Brand: XCH (implied by product name)
- Certifications: RoHS, Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=30A | 4.8 | 6 | m | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=15A | 7.8 | 9 | VGS | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | 1 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| Qg | Total Gate Charge | VDS=15V , VGS=4.5V , ID=15A | 31.6 | nC | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 3075 | 4000 | pF | |
| Coss | Output Capacitance | VDS=15V , VGS=0V , f=1MHz | 400 | 530 | pF | |
| Crss | Reverse Transfer Capacitance | VDS=15V , VGS=0V , f=1MHz | 315 | pF | ||
| ID | Continuous Drain Current | VGS @ 10V, TC=25 | 80 | A | ||
| ID | Continuous Drain Current | VGS @ 10V, TC=100 | 50 | A | ||
| ID | Continuous Drain Current | VGS @ 10V, TA=25 | 19 | A | ||
| ID | Continuous Drain Current | VGS @ 10V, TA=70 | 16 | A | ||
| IDM | Pulsed Drain Current | 192 | A | |||
| EAS | Single Pulse Avalanche Energy | 144.7 | mJ | |||
| IAS | Avalanche Current | 53.8 | A | |||
| PD | Total Power Dissipation | TC=25 | 62.5 | W | ||
| PD | Total Power Dissipation | TA=25 | 2.42 | W | ||
| TSTG | Storage Temperature Range | -55 | 175 | |||
| TJ | Operating Junction Temperature Range | -55 | 175 | |||
| RJC | Thermal Resistance Junction-Case | 2.4 | /W | |||
| RJA | Thermal Resistance Junction-Ambient | 62 | /W | |||
| RJA | Thermal Resistance Junction-Ambient | (t 10s) | 25 | /W | ||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.0213 | V/ | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | -5.73 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=55 | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=5V , ID=30A | 26.5 | S | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.4 | 2.8 | ||
| Qg | Total Gate Charge | VDS=15V , VGS=4.5V , ID=15A | 31.6 | nC | ||
| Qgs | Gate-Source Charge | 8.6 | nC | |||
| Qgd | Gate-Drain Charge | 11.7 | nC | |||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3 ID=15A | 9 | ns | ||
| Tr | Rise Time | 19 | ns | |||
| Td(off) | Turn-Off Delay Time | 58 | ns | |||
| Tf | Fall Time | 15.2 | ns | |||
| IS | Continuous Source Current | VG=VD=0V , Force Current | 80 | A | ||
| ISM | Pulsed Source Current | 132 | A | |||
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | 1 | V | ||
| trr | Reverse Recovery Time | IF=30A , dI/dt=100A/s , TJ=25 | 18 | nS | ||
| Qrr | Reverse Recovery Charge | 8 | nC |
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