Low gate charge P channel MOSFET XCH BSS84 ideal for power management and synchronous buck circuits
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Product Description
Product Overview
The BSS84 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, contributing to efficient operation. This device meets RoHS and Green Product requirements with full function reliability approval.
Product Attributes- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: RoHS, Green Product
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -50 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25C | Continuous Drain Current, VGS @ -4.5V1 | -0.17 | A | |||
| ID@TA=70C | Continuous Drain Current, VGS @ -4.5V1 | -0.14 | A | |||
| IDM | Pulsed Drain Current2 | -1.2 | A | |||
| PD@TA=25C | Total Power Dissipation3 | 0.35 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | C | ||
| TJ | Operating Junction Temperature Range | -55 | 150 | C | ||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | 357 | C/ W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -50 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-0.15A | 3.3 | 8 | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-0.15A | 3.5 | 9.9 | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.9 | -1.4 | -2.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=-50V , VGS=0V , TJ=25C | -1 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS= 20V , VDS=0V | 100 | nA | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-30V , VGS=-10V , ID=-0.15A | 1.77 | nC | ||
| Qgs | Gate-Source Charge | 0.57 | ||||
| Qgd | Gate-Drain Charge | 0.18 | ||||
| Td(on) | Turn-On Delay Time | VDD=-30V , VGS=-4.5V , RG=2.5 , ID=-0.15A | 8.6 | ns | ||
| Tr | Rise Time | 20 | ||||
| Td(off) | Turn-Off Delay Time | 15 | ||||
| Tf | Fall Time | 77 | ||||
| Ciss | Input Capacitance | VDS=-30V , VGS=0V , f=1MHz | 43 | pF | ||
| Coss | Output Capacitance | 2.9 | ||||
| Crss | Reverse Transfer Capacitance | 1.8 | ||||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | -0.17 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-0.17A , TJ=25C | -1.2 | V | ||
| trr | Reverse Recovery Time | IF=-0.15A , di/dt=100A/ s , TJ=25C | 23 | nS | ||
| Qrr | Reverse Recovery Charge | 13 | nC | |||
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