voltage controlled MOSFET TOSHIBA TK20S06K3L T6L1 NQ featuring trench and double diffusion structure
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Toshiba MOSFET Product Guide 2009-9
Toshiba MOSFETs are designed to meet the demands of ultra-high-density applications, offering superior frequency and switching characteristics due to their trench structure and double-diffusion MOS (D-MOS) structure. These devices are voltage-controlled, requiring low drive power and enabling easy parallel connection. Key advantages include guaranteed avalanche capability, improved built-in diode function, high ruggedness, high-speed switching, low ON-resistance (RDS(ON)) for reduced power consumption, smaller package sizes, and low drive loss.
Product Attributes
- Brand: Toshiba
- Origin: Japan (implied by domain)
Technical Specifications
| Series | Structure | Key Features | Applications | VDSS Range |
| -MOS | Double-Diffusion MOS (D-MOS) | High-withstand voltage, high-current devices, high-performance, low ON-resistance, low power loss. | Switching power supplies, AC adapters, Motor drivers | Not specified |
| U-MOS | Trench Type | Higher channel density, lower ON-resistance than other MOSFET structures. Ideal for synchronous rectification. | Synchronous rectification on the secondary side of power supply circuits, Lithium-ion secondary battery protection circuits, Notebook PCs, Portable electronic devices, DC-DC converters | 40 V to 150 V |
| DTMOS | Super-Junction Structure | Realizes high withstand voltage and ON-resistance lower than the conventional theoretical limit of silicon. Achieves low ON-resistance and low gate charge (Qg). | Switching power supplies, AC adapters, Motor drivers, Solenoids and lamp drivers | 600 V, 650 V |
| High-Speed -MOS | -MOS | Higher switching speed than the well-proven -MOS Series. Available in high-speed switching and high-speed diode series. | Inverters, Switching power supplies, Motor drivers, AC adapters | 450 V to 600 V |
| -MOSVII | -MOS | Reduced capacitances due to optimized chip design, wider range of electrical characteristics. | Switching power supplies, AC adapters, Motor drivers | 450 V to 650 V |
| TO-220SM(W) | Trench technology | Low ON-resistance, high current-carrying capability. Low-voltage drive (VGS = 4 V) possible due to ultra-low ON-resistance. | Lithium-ion secondary battery protection circuits, Notebook PCs, Portable electronic devices, DC-DC converters | 40 V to 150 V |
| SOP and TSON Series | Trench technology | Compact and thin, small mounting area. | Lithium-ion secondary battery protection circuits, Notebook PCs | 20 V to 250 V |
| LGA and STP Series | Trench technology | Ultra-small and thin package. | Lithium-ion secondary battery protection circuits in various portable electronic devices | 20 V to 30 V |
| VS and PS Series | Not specified | Very compact and thin. | Various electronic devices, Motor drivers, Switching power supplies | 12 V to 40 V |
| SSM Series | Not specified | Very compact and thin, low voltage drive. Available in a wide range of packages. | Cell phones, Notebook PCs, Portable electronic devices, Small-signal switching | 12 V to 60 V |
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