China load switch and power switching solutions using XCH XCHS1005 N channel MOSFET with low RDS ON values for sale

load switch and power switching solutions using XCH XCHS1005 N channel MOSFET with low RDS ON values

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Product Description

Product Overview

The XCHS1005 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. Key features include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology.

Product Attributes

Certifications: RoHS, Green Product

Technical Specifications

Symbol	Parameter	Test Condition	Min	Typ	Max	Units
Absolute Maximum Ratings
VDS	Drain-Source Voltage				100	V
VGS	Gate-Source Voltage			±20		V
ID@TA=25	Continuous Drain Current, VGS @ 10V			4.5		A
ID@TA=70	Continuous Drain Current, VGS @ 10V			2.2		A
IDM	Pulsed Drain Current			11		A
PD@TA=25	Total Power Dissipation			1		W
TSTG	Storage Temperature Range		-55		150
TJ	Operating Junction Temperature Range		-55		150
Thermal Data
RJA	Thermal Resistance Junction-ambient			---	125	/W
RJC	Thermal Resistance Junction-Case			---	80	/W
Electrical Characteristics (TC=25 unless otherwise specified)
V(BR)DSS	Drain-Source Breakdown Voltage	VGS = 0V, ID = 250A	100	110	-	V
IDSS	Zero Gate Voltage Drain Current	VDS = 100V, VGS = 0V	-	-	1	A
IGSS	Gate to Body Leakage Current	VDS = 0V, VGS = ±20V	-	-	±100	nA
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250A	1.0	1.95	3.0	V
RDS(on)	Static Drain-Source On-Resistance	VGS = 10V, ID = 3A	-	95	140	m
Dynamic Characteristics
Ciss	Input Capacitance	VDS = 50V, VGS = 0V, f = 1.0MHz	-	196	-	pF
Coss	Output Capacitance		-	25.9	-	pF
Crss	Reverse Transfer Capacitance		-	21.4	-	pF
Qg	Total Gate Charge	VDS = 50V, ID = 3A, VGS = 10V	-	4.3	-	nC
Qgs	Gate-Source Charge		-	3.5	-	nC
Qgd	Gate-Drain(Miller) Charge		-	3.1	-	nC
Switching Characteristics
td(on)	Turn-On Delay Time	VDD = 50V, IDS=3A RG = 2, VGEN = 10V	-	14.7	-	ns
tr	Turn-On Rise Time		-	3.5	-	ns
td(off)	Turn-Off Delay Time		-	20.9	-	ns
tf	Turn-Off Fall Time		-	2.7	-	ns
Drain-Source Diode Characteristics and Maximum Ratings
IS	Maximum Continuous Drain to Source Diode Forward Current		-	-	4.5	A
ISM	Maximum Pulsed Drain to Source Diode Forward Current		-	-	12	A
VSD	Drain to Source Diode Forward Voltage	VGS = 0V, IS =3A	-	-	1.3	V
trr	Body Diode Reverse Recovery Time	VGS = 0V, IF = 3A, di/dt =100A/s	-	32.1	-	ns
Qrr	Body Diode Reverse Recovery Time Charge		-	39.4	-	nC
Irrm	Peak Reverse Recovery Current		-	2.1	-	A