High Current NPN Transistor Suzhou Good-Ark Elec GSBCX56-16 Designed for Audio Amplifier Driver Stage

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Product Description

Product Overview

The GSBCX54-55-56 series are NPN transistors designed for driver stages of audio amplifiers. They offer low voltage and high current capabilities, with NPN complements to the GSBCX51, GSBCX52, and GSBCX53 series. These transistors are available in a SOT-89-3L package.

Product Attributes

Brand: Goodarksemi (inferred from URL)
Package: SOT-89-3L
Certifications: RoHS Compliant

Technical Specifications

Parameter	Symbol	GSBCX54	GSBCX55	GSBCX56	Unit	Test Conditions
Collector-Emitter Voltage	VCEO	45	60	100	V	IC=10mA,IB=0
Collector-Base Voltage	VCBO	45	60	80	V	IE=100A,IC=0
Emitter-Base Voltage	VEBO	5	5	5	V	IC=0
Collector Current	IC	1	1	1	A
Base Current Peak	IBM	0.1	0.1	0.1	A	(tp<1ms)
Collector Power Dissipation	PC	0.2	0.2	0.2	A
Collector Power Dissipation	PC	500	500	500	mW
Thermal Resistance Junction To Ambient	RJA	250	250	250	/W
Junction Temperature	TJ	150	150	150
Storage Temperature	TSTG	-55 to +150	-55 to +150	-55 to +150
Emitter-Base Breakdown Voltage	V(BR)EBO	5	5	5	V	VEB=5V,IC=0
Collector Cut- Off Current	ICBO	0.1	0.1	0.1	A	VCB=30V,IE=0
Emitter Cut-Off Current	IEBO	0.1	0.1	0.1	A	IE=100A,IC=0
DC Current Gain	hFE(1)	40	40	40		VCE=2V, IC=0.5A
DC Current Gain	hFE(2)	63	63	63		VCE=2V, IC=0.5A
DC Current Gain	hFE(2)	250	160	250		VCE=2V, IC=0.5A
DC Current Gain	hFE(3)	25	25	25		VCE=2V, IC=150mA
Collector-Emitter Saturation Voltage	VCE(sat)	0.5	0.5	0.5	V	IC=0.5A,IB=50mA
Base -Emitter Voltage	VBE	1	1	1	V	VCE=2V, IC=5mA
Transition Frequency	fT	130	130	130	MHz	VCE=5V,IC=10mA, f=100MHz
Collector-Base Breakdown Voltage	V(BR)CBO	45	60	100	V	IC=100A,IE=0
Collector-Emitter Breakdown Voltage	V(BR)CEO	45	60	80	V	IC=10mA,IB=0