Small power switching MOSFET XCH 2N7002K featuring trench technology and low RDSon for performance

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Product Description

Product Overview

The FKN0008 is a high cell density trenched N-channel MOSFET designed for excellent RDS(on) and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. Key features include Green Device availability, super low gate charge, and excellent Cdv/dt effect decline due to advanced high cell density Trench technology.

Product Attributes

Certifications: RoHS, Green Product

Technical Specifications

Part Number	BVDSS (V)	RDS(on) ()	ID (A)	Package
FKN0008 / 2N7002K	60	1.9	0.3	SOT23

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Units
Absolute Maximum Ratings
VDSS	Drain-Source Voltage				60	V
VGSS	Gate-Source Voltage				20	V
ID	Continuous Drain Current (TA= 25)				0.3	A
ID	Continuous Drain Current (TA= 100)				0.2	A
IDM	Pulsed Drain Current (note1)				1.2	A
PD	Power Dissipation (TA= 25)				0.35	W
RJA	Thermal Resistance, Junction to Ambient				357	/W
TJ, TSTG	Operating and Storage Temperature Range		-55		+150
Electrical Characteristics
V(BR)DSS	Drain-Source Breakdown Voltage	VGS=0V, ID= 250A	60	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS =60V, VGS = 0V	-	-	1	A
IGSS	Gate to Body Leakage Current	VDS =0V, VGS = 20V	-	-	10	uA
VGS(th)	Gate Threshold Voltage	VDS= VGS, ID= 250A	1	1.5	2.5	V
RDS(on)	Static Drain-Source on-Resistance (note2)	VGS =10V, ID =0.3A	-	1.9	2.2
RDS(on)	Static Drain-Source on-Resistance (note2)	VGS =4.5V, ID =0.2A	-	2.05	2.87
Ciss	Input Capacitance	VDS = 25V, VGS = 0V, f = 1.0MHz	-	28	-	pF
Coss	Output Capacitance		-	11	-	pF
Crss	Reverse Transfer Capacitance		-	4	-	pF
Qg	Total Gate Charge	VDS = 10V, ID = 0.3A, VGS = 4.5V	-	1.7	-	nC
Qgs	Gate-Source Charge		-	0.3	-	nC
Qgd	Gate-Drain(Miller) Charge		-	0.6	-	nC
Switching Characteristics
td(on)	Turn-on Delay Time	VDD = 10V, ID =0.2A, RGEN = 10,VGS=10V	-	2	-	ns
tr	Turn-on Rise Time		-	15	-	ns
td(off)	Turn-off Delay Time		-	7	-	ns
tf	Turn-off Fall Time		-	20	-	ns
Drain-Source Diode Characteristics and Maximum Ratings
IS	Maximum Continuous Drain to Source Diode Forward Current		-	-	0.3	A
ISM	Maximum Pulsed Drain to Source Diode Forward Current		-	-	1.2	A
VSD	Drain to Source Diode Forward Voltage	VGS = 0V, IS =0.3A	-	-	1.2	V