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High Voltage NPN Bipolar Transistor TOSHIBA 2SC2712-GR TE85L F for Low Frequency and Audio Amplifiers

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Product Description

Product Overview

The 2SC2712 is a silicon NPN epitaxial bipolar transistor, first produced in October 1982. It is designed for low-frequency amplifiers, audio frequency general-purpose amplification, and AM amplifiers. Key features include high voltage (VCEO = 50 V), high collector current (IC = 150 mA max), excellent hFE linearity, and low noise (NF = 1 dB typ.). It is AEC-Q101 qualified and complementary to the 2SA1162.

Product Attributes

  • Brand: Toshiba
  • Type: Silicon NPN Epitaxial Bipolar Transistor
  • Packaging: S-Mini
  • Certifications: AEC-Q101 qualified

Technical Specifications

CharacteristicsSymbolRatingUnitTest ConditionMinTyp.Max
Collector-base voltageVCBO60V
Collector-emitter voltageVCEO50V
Emitter-base voltageVEBO5V
Collector current (DC)IC150mA
Base currentIB30mA
Collector power dissipationPC200mW(Note 2), (Note 4)
Junction temperatureTj150°C(Note 2), (Note 3)
Storage temperatureTstg-55 to 150°C(Note 2), (Note 3)
Collector cut-off currentICBOµAVCB = 60 V, IE = 0 mA0.1
Emitter cut-off currentIEBOµAVEB = 5 V, IC = 0 mA0.1
DC current gainhFEVCE = 6 V, IC = 2 mA70700
Collector-emitter saturation voltageVCE(sat)VIC = 100 mA, IB = 10 mA0.10.25
Transition frequencyfTMHzVCE = 10 V, IC = 1 mA80
Collector output capacitanceCobpFVCB = 10 V, IE = 0 A, f = 1 MHz2.03.5
Noise figureNFdBVCE = 6 V, IC = 0.1 mA, f = 1 kHz, RG = 10 kΩ1.010

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
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