TOSHIBA 2SC2713-GR LF General Purpose Silicon NPN Transistor with High Voltage and High Current Gain

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Product Description

Product Overview

The TOSHIBA 2SC2713 is a silicon NPN epitaxial transistor utilizing the PCT process. It is designed for audio frequency general purpose amplifier applications, offering high voltage capabilities (VCEO = 120 V), excellent hFE linearity, high hFE (200 to 700), and low noise (NF = 1dB typ.). It is complementary to the 2SA1163 and comes in a small package.

Product Attributes

Brand: TOSHIBA
Origin: Japan (implied by manufacturer)
Material: Silicon
Package: JEDEC TO-236MOD / JEITA SC-59 (2-3F1A)
Weight: 0.012 g (typ.)

Technical Specifications

Characteristics	Symbol	Test Condition	Min	Typ.	Max	Unit
Collector cut-off current	ICBO	VCB = 120 V, IE = 0			0.1	A
Emitter cut-off current	IEBO	VEB = 5 V, IC = 0			0.1	A
DC current gain	hFE (Note)	VCE = 6 V, IC = 2 mA	200		700
Collector-emitter saturation voltage	VCE (sat)	IC = 10 mA, IB = 1 mA			0.3	V
Transition frequency	fT	VCE = 6 V, IC = 1 mA		100		MHz
Collector output capacitance	Cob	VCB = 10 V, IE = 0, f = 1 MHz		3.0		pF
Noise figure	NF	VCE = 6 V, IC = 0.1 mA, f = 1 kHz, RG = 10 k		1.0	10	dB

Absolute Maximum Ratings

Characteristics	Symbol	Rating	Unit
Collector-base voltage	VCBO	120	V
Collector-emitter voltage	VCEO	120	V
Emitter-base voltage	VEBO	5	V
Collector current	IC	100	mA
Base current	IB	20	mA
Collector power dissipation	PC	150	mW
Junction temperature	Tj	125	C
Storage temperature range	Tstg	55 to 125	C