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General Purpose Amplifier Transistor TOSHIBA 2SC2713-GR LXGF Silicon NPN with Low Noise and High hFE

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Product Description

Product Overview

The TOSHIBA 2SC2713 is a silicon NPN epitaxial transistor designed for audio frequency general purpose amplifier applications. It is AEC-Q101 qualified and features high voltage capability (VCEO = 120 V), excellent hFE linearity, high hFE (200 to 700), low noise (NF = 1dB typ.), and is complementary to the 2SA1163. The transistor comes in a small package.

Product Attributes

  • Brand: TOSHIBA
  • Type: Silicon NPN Epitaxial Transistor
  • Process: PCT process
  • Certifications: AEC-Q101 Qualified (Note1)
  • Package: JEDEC TO-236MOD / JEITA SC-59
  • Weight: 0.012 g (typ.)
  • Origin: Japan (implied by Toshiba)
  • Start of Commercial Production: 1982-10

Technical Specifications

CharacteristicsSymbolTest ConditionMinTyp.MaxUnit
Collector cut-off currentICBOVCB = 120 V, IE = 0 A--0.1A
Emitter cut-off currentIEBOVEB = 5 V, IC = 0 A--0.1A
DC current gainhFEVCE = 6 V, IC = 2 mA200-700-
Collector-emitter saturation voltageVCE (sat)IC = 10 mA, IB = 1 mA--0.3V
Transition frequencyfTVCE = 6 V, IC = 1 mA-100-MHz
Collector output capacitanceCobVCB = 10 V, IE = 0 A, f = 1 MHz-3.0-pF
Noise figureNFVCE = 6 V, IC = 0.1 mA, f = 1 kHz, RG = 10 k-1.010dB

Absolute Maximum Ratings

CharacteristicsSymbolRatingUnit
Collector-base voltageVCBO120V
Collector-emitter voltageVCEO120V
Emitter-base voltageVEBO5V
Collector currentIC100mA
Base currentIB20mA
Collector power dissipation (Note 2, 4)PC200mW
Collector power dissipation (Note 3)PC150mW
Junction temperature (Note 2)Tj150C
Junction temperature (Note 3)Tj125C
Storage temperature range (Note 2)Tstg-55 to 150C
Storage temperature range (Note 3)Tstg-55 to 125C

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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